The structure and optical properties of silicon ultrafine particles deposited by the gas-evaporation technique with a supersonic jet nozzle

AbstractGermanium (Ge) films were deposited on substrates whose temperature was kept at room (Ge-RT) or liquid nitrogen temperature (Ge-LNT) by the cluster-beam evaporation technique. The Raman spectra of both films with a double peak suggest that the crystal structure is not the ordinary diamond but the tetragonal one. The critical temperature for the phase transformation from the tetragonal into the diamond structure is found much higher than that for the Ge nanostructures deposited by the gas-evaporation technique. The Ge-LNT sample exhibits photooxidation and photoluminescence (PL) when it is exposed to the UV light. Their PL and optical absorption characteristics are strongly influenced by a combination of the photo-oxidation and thermal annealing treatments.

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The Study of Metal Colloids Produced by Means of Gas Evaporation Technique. I. Preparation Method and Optical Properties in Ethanol

Bulletin of the Chemical Society of Japan ◽

10.1246/bcsj.56.3578 ◽

1983 ◽

Vol 56 (12) ◽

pp. 3578-3584 ◽

Cited By ~ 68

Author(s):

Keisaku Kimura ◽

Shunji Bandow

Keyword(s):

Optical Properties ◽

Preparation Method ◽

Metal Colloids ◽

Evaporation Technique ◽

Gas Evaporation Technique

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A Collection Method for Ultrafine Particles Produced by the Gas Evaporation Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.559 ◽

1991 ◽

Vol 30 (Part 1, No. 3) ◽

pp. 559-560 ◽

Cited By ~ 1

Author(s):

Chihiro Kaito ◽

Yukio Yoshimura ◽

Yoshio Saito

Keyword(s):

Ultrafine Particles ◽

Collection Method ◽

Evaporation Technique ◽

Gas Evaporation Technique

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Growth of ultrafine particles of transition metal nitrides by the reactive gas evaporation technique with electron beam heating

Journal of Crystal Growth ◽

10.1016/0022-0248(84)90090-3 ◽

1984 ◽

Vol 66 (1) ◽

pp. 189-194 ◽

Cited By ~ 20

Author(s):

Saburo Iwama ◽

Kenji Hayakawa ◽

Tetsuya Arizumi

Keyword(s):

Electron Beam ◽

Transition Metal ◽

Ultrafine Particles ◽

Metal Nitrides ◽

Transition Metal Nitrides ◽

Beam Heating ◽

Evaporation Technique ◽

Electron Beam Heating ◽

Gas Evaporation Technique ◽

Reactive Gas

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Blue Light Emission from Germanium Ultrafine Particles by the Gas Evaporation Technique

MRS Proceedings ◽

10.1557/proc-358-133 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 2

Author(s):

Shinji Nozaki ◽

S. Sato ◽

A. Denda ◽

H. Ono ◽

H. Morisaki

Keyword(s):

Blue Light ◽

Ultrafine Particles ◽

Light Emission ◽

Uv Light ◽

Hydrogen Atmosphere ◽

Pure Hydrogen ◽

Blue Light Emission ◽

Long Time ◽

Evaporation Technique ◽

Gas Evaporation Technique

ABSTRACTThe ultrafine particles with diameters in the order of 10 nm were deposited onto Si and SiO2 substrates by evaporation of Ge in a pure hydrogen atmosphere. Although the as-deposited Ge ultrafine particles do not show any detectable luminescence, they emit blue light after being exposed to the UV light for a long time. The blue light is strong enough to be seen with the naked eye even under a room light. The photooxidation, unique to the Ge ultrafine particles, has been identified as a major factor contributing to the blue light emission.

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Capacitance-Voltage (C-V) Hysteresis in the Metal-Oxide-Semiconductor Capacitor with Si Nanocrystals Deposited by the Gas Evaporation Technique

MRS Proceedings ◽

10.1557/proc-686-a5.4 ◽

2001 ◽

Vol 686 ◽

Author(s):

Puspashree Mishra ◽

Shinji Nozaki ◽

Ryuta Sakura ◽

Hiroshi Morisaki ◽

Hiroshi Ono ◽

...

Keyword(s):

Metal Oxide ◽

Supersonic Jet ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Mos Capacitor ◽

Si Nanocrystals ◽

Capacitance Voltage ◽

Evaporation Technique ◽

Gas Evaporation Technique

AbstractCapacitance-Voltage (C-V) hysteresis was observed in the Metal-Oxide-Semiconductor (MOS) capacitor with silicon nanocrystals. The MOS capacitor was fabricated by thermal oxidation of Si nanocrystals, which were deposited on an ultra-thin thermal oxide grown previously on a p-type Si substrate. The Si nanocrystals were deposited by the gas evaporation technique with a supersonic jet nozzle. The size uniformity and the crystallinity of the Si nanocrystals are found to be better than those fabricated by the conventional gas evaporation technique. The C-V hysteresis in the MOS capacitor is attributed to electron charging and discharging of the nanocrystals by direct tunneling though the ultra-thin oxide between the nanocrystals and the substrate. The flat-band voltage shift observed during the C-V measurement depends on the size and density of the nanocrystals and also on the magnitude of the positive gate bias for charging. The retention characteristic is also discussed.

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