Phase Transformation of Germanium Ultrafine Particles at High Temperature

1995 ◽  
Vol 405 ◽  
Author(s):  
S. Nozaki ◽  
S. Sato ◽  
H. Ono ◽  
H. Morisaki ◽  
M. Iwase

AbstractGermanium (Ge) films were deposited on substrates whose temperature was kept at room (Ge-RT) or liquid nitrogen temperature (Ge-LNT) by the cluster-beam evaporation technique. The Raman spectra of both films with a double peak suggest that the crystal structure is not the ordinary diamond but the tetragonal one. The critical temperature for the phase transformation from the tetragonal into the diamond structure is found much higher than that for the Ge nanostructures deposited by the gas-evaporation technique. The Ge-LNT sample exhibits photooxidation and photoluminescence (PL) when it is exposed to the UV light. Their PL and optical absorption characteristics are strongly influenced by a combination of the photo-oxidation and thermal annealing treatments.

1994 ◽  
Vol 358 ◽  
Author(s):  
Shinji Nozaki ◽  
S. Sato ◽  
A. Denda ◽  
H. Ono ◽  
H. Morisaki

ABSTRACTThe ultrafine particles with diameters in the order of 10 nm were deposited onto Si and SiO2 substrates by evaporation of Ge in a pure hydrogen atmosphere. Although the as-deposited Ge ultrafine particles do not show any detectable luminescence, they emit blue light after being exposed to the UV light for a long time. The blue light is strong enough to be seen with the naked eye even under a room light. The photooxidation, unique to the Ge ultrafine particles, has been identified as a major factor contributing to the blue light emission.


1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.


1978 ◽  
Vol 17 (2) ◽  
pp. 291-297 ◽  
Author(s):  
Yahachi Saito ◽  
Shigeki Yatsuya ◽  
Kazuhiro Mihama ◽  
Ryozi Uyeda

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 559-560 ◽  
Author(s):  
Chihiro Kaito ◽  
Yukio Yoshimura ◽  
Yoshio Saito

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