Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics

2001 ◽  
Vol 4 (4) ◽  
pp. 383-391 ◽  
Author(s):  
N. Ariel ◽  
M. Eizenberg ◽  
Y. Wang ◽  
S.P. Murarka
1996 ◽  
Vol 68 (12) ◽  
pp. 1643-1645 ◽  
Author(s):  
T. A. Friedmann ◽  
K. F. McCarty ◽  
J. C. Barbour ◽  
M. P. Siegal ◽  
Dean C. Dibble

2006 ◽  
Vol 510 (1-2) ◽  
pp. 125-133 ◽  
Author(s):  
Chia-Han Lai ◽  
Wei-Shun Lai ◽  
Hua-Chun Chiue ◽  
Hung-Jen Chen ◽  
Shou-Yi Chang ◽  
...  

2000 ◽  
Vol 71 (4) ◽  
pp. 433-439 ◽  
Author(s):  
S. Rey ◽  
F. Antoni ◽  
B. Prevot ◽  
E. Fogarassy ◽  
J.C. Arnault ◽  
...  

1999 ◽  
Vol 565 ◽  
Author(s):  
J. P. Chang ◽  
H. W. Krautter ◽  
W. Zhu ◽  
R. L. Opila ◽  
C. S. Pai

AbstractThe thermal and chemical stability of low k fluorinated amorphous carbon (a-C:F) material, deposited by a novel co-sputtering process using both polytetrafluoroethylene (PTFE) and graphite targets was investigated. Thin films of a-C:F with fluorine concentration of 2–55% were deposited, and carbon is observed by XPS in four distinct chemical states, C-C, C-F, C-F2, C-F 3. The relative intensity of C-Fx to C-C increased in intensity with increasing fluorine content and decreasing deposition temperature. Formation of tantalum fluoride was observed upon deposition of tantalum nitride, and the defluorination of the film could lead to reliability and delamination problems.


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