Effects and thermal stability of hydrogen microwave plasma treatment on tetrahedral amorphous carbon films by in situ ultraviolet photoelectron spectroscopy

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

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Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics

Materials Science in Semiconductor Processing ◽

10.1016/s1369-8001(00)00096-2 ◽

2001 ◽

Vol 4 (4) ◽

pp. 383-391 ◽

Cited By ~ 10

Author(s):

N. Ariel ◽

M. Eizenberg ◽

Y. Wang ◽

S.P. Murarka

Keyword(s):

Thermal Stability ◽

Temperature Effect ◽

Amorphous Carbon ◽

Deposition Temperature ◽

Carbon Films ◽

Amorphous Carbon Films ◽

Low K ◽

Thermal Stability Of

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Improvement of the thermal stability of amorphous carbon films by incorporation of nitrogen

Thin Solid Films ◽

10.1016/s0040-6090(99)00421-6 ◽

1999 ◽

Vol 353 (1-2) ◽

pp. 157-165 ◽

Cited By ~ 31

Author(s):

H.L. Bai ◽

E.Y. Jiang

Keyword(s):

Thermal Stability ◽

Amorphous Carbon ◽

Carbon Films ◽

Amorphous Carbon Films ◽

Thermal Stability Of

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Thermal Stability of Ultrathin Amorphous Carbon Films for Energy-Assisted Magnetic Recording

IEEE Transactions on Magnetics ◽

10.1109/tmag.2011.2139221 ◽

2011 ◽

Vol 47 (9) ◽

pp. 2277-2282 ◽

Cited By ~ 36

Author(s):

N. Wang ◽

K. Komvopoulos

Keyword(s):

Thermal Stability ◽

Amorphous Carbon ◽

Magnetic Recording ◽

Carbon Films ◽

Amorphous Carbon Films ◽

Thermal Stability Of

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THE DETERMINATION OF SP3 FRACTION IN TETRAHEDRAL AMORPHOUS CARBON FILMS BY RAMAN AND X-RAY PHOTOELECTRON SPECTROSCOPY

International Journal of Modern Physics B ◽

10.1142/s0217979202015510 ◽

2002 ◽

Vol 16 (28n29) ◽

pp. 4413-4417 ◽

Cited By ~ 4

Author(s):

DIHU CHEN ◽

G. Y. JING ◽

AIXIANG WEI

Keyword(s):

Amorphous Carbon ◽

Photoelectron Spectroscopy ◽

Plasma Deposition ◽

Carbon Films ◽

Gaussian Peak ◽

Xps Spectra ◽

Raman Analysis ◽

Amorphous Carbon Films ◽

Tetrahedral Amorphous Carbon

Tetrahedral amorphous carbon films have been prepared by magnetic filtered plasma deposition system. The samples were deposited with negative bias voltage V b range from +20 V to -95 V. The relative fraction of sp 3-bonded carbon in these films was qualitatively and quantitatively estimated by a fitting of the Raman and XPS spectra, respectively. Raman results show that the sp 3 fraction of the films deposited in the range from -10 V to -50 V was estimated to be more than 80%. The C 1s spectra were consistently decomposed into the two gaussian components, one is at 284.4±0.1 eV corresponding to sp 2-hybridized bonds, and another is at 285.2±0.1 eV corresponding to sp 3-hybridized bond. The sp 3 content can be quantitatively calculated from the integrated area of the respective gaussian peak divided by the total area of the spectra. The comparison of XPS with Raman analysis, the trend of qualitative variation of sp 3 content with V b is in agreement. We concluded that XPS analysis is a useful method for quantitatively calculating sp 3 content in hydrogen-free tetrahedral amorphous carbon films.

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