Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy

2001 ◽  
Vol 4 (1-3) ◽  
pp. 109-111 ◽  
Author(s):  
S. Hens ◽  
J. Van Landuyt ◽  
H. Bender ◽  
W. Boullart ◽  
S. Vanhaelemeersch
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Analysis ◽  
Semiconductor Devices ◽  
Energy Filtering ◽  
Transmission Electron

The use of an energy-filtering electron microscope to reduce chromatic aberration in images of thick biological specimens

1986 ◽  
Vol 44 ◽  
pp. 88-91
Author(s):  
L. D. Peachey ◽  
J. P. Heath ◽  
G. Lamprecht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Cross Section ◽  
Electron Scattering ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Incident Electron Energy ◽  
Energy Filtering ◽  
Transmission Electron

Biological specimens of cells and tissues generally are considerably thicker than ideal for high resolution transmission electron microscopy. Actual image resolution achieved is limited by chromatic aberration in the image forming electron lenses combined with significant energy loss in the electron beam due to inelastic scattering in the specimen. Increased accelerating voltages (HVEM, IVEM) have been used to reduce the adverse effects of chromatic aberration by decreasing the electron scattering cross-section of the elements in the specimen and by increasing the incident electron energy.

scholarly journals Development of a New Acquisition Scheme for Energy-Filtering Transmission Electron Microscopy Spectrum-Imaging toward Quantification

2011 ◽  
Vol 17 (S2) ◽  
pp. 790-791
Author(s):  
M Watanabe ◽  
F Allen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Filtering ◽  
Transmission Electron ◽  
Acquisition Scheme ◽  
Spectrum Imaging

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Application of Tem on Sub-Half Micron Semiconductor Devices

1998 ◽  
Vol 523 ◽  
Author(s):  
Hong Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Failure Analysis ◽  
Process Evaluation ◽  
Semiconductor Devices ◽  
Single Source ◽  
Process Step ◽  
Transmission Electron ◽  
Single Process ◽  
Single Process Step

AbstractApplication of transmission electron microscopy on sub-half micron devices has been illustrated in terms of process evaluation and failure analysis. For process evaluation, it is emphasized that a large number of features need to be examined in order to have reliable conclusions about the processes, while for failure analysis, the goal is to pin-point a single process step causing failure or a single source introducing the particle defect.

scholarly journals Analysis of Metal/Plastic Interfaces by Energy-Filtering Transmission Electron Microscopy

2012 ◽  
Vol 48 (9) ◽  
pp. 322-330 ◽  
Author(s):  
Shin HORIUTI ◽  
Takeshi HANADA ◽  
Takayuki MIYAMAE ◽  
Tadae YAMANAKA ◽  
Kogoro OOSUMI ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Filtering ◽  
Transmission Electron
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