Structural analysis of an Si/CoSi2/Si heterostructure using ultrahigh resolution transmission electron microscopy

1986 ◽  
Vol 137 (2) ◽  
pp. 351-361 ◽  
Author(s):  
Cécile d'Anterroches ◽  
François Arnaud d'Avitaya
2012 ◽  
pp. 81-107 ◽  
Author(s):  
Knut W. Urban ◽  
Juri Barthel ◽  
Lothar Houben ◽  
Chun-Lin Jia ◽  
Markus Lentzen ◽  
...  

2002 ◽  
Vol 387 (1) ◽  
pp. 145-150 ◽  
Author(s):  
Kyoichi Oshida ◽  
Kozo Osawa ◽  
Tatsuo Nakazawa ◽  
Yasuo Fukai ◽  
Takuya Hayashi ◽  
...  

2018 ◽  
Vol 19 (3) ◽  
pp. 989-995 ◽  
Author(s):  
Pablo Hernandez-Cerdan ◽  
Bradley W. Mansel ◽  
Andrew Leis ◽  
Leif Lundin ◽  
Martin A.K. Williams

2007 ◽  
Vol 556-557 ◽  
pp. 255-258
Author(s):  
Igor Matko ◽  
Bernard Chenevier ◽  
Jean Marie Bluet ◽  
Roland Madar ◽  
Fabrice Letertre ◽  
...  

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence.


2013 ◽  
Vol 845 ◽  
pp. 221-225
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhammad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad Mohamad Ali

The growth of intermetallic phases in Al/Cu bilayers thin film having 2/3 layer thickness ratios were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM). In annealing temperature of 200 °C, the growth is controlled by Cu diffusion which resulted to formation of θ-Al2Cu, η-AlCu, ζ-Al3Cu4 and γ-Al4Cu9 phase.


2013 ◽  
Vol 275 ◽  
pp. 409-412 ◽  
Author(s):  
K. Oshida ◽  
M. Murata ◽  
K. Fujiwara ◽  
T. Itaya ◽  
T. Yanagisawa ◽  
...  

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