Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2067 ◽

2015 ◽

Vol 29 (2) ◽

pp. 230-242 ◽

Author(s):

Ping Wang ◽

Yiqi Zhuang ◽

Cong Li ◽

Yuqi Liu ◽

Zhi Jiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3074 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3074-3078 ◽

Author(s):

Yuki Tahara ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantitative Modeling ◽

Double Gate ◽

Effect Transistor

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Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8311 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8311-8316 ◽

Author(s):

Ryo Tanabe ◽

Kunihiro Suzuki

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Threshold Voltage Model

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An Accurate Model for Threshold Voltage Analysis of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-020-00553-8 ◽

2020 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Accurate Model ◽

Effect Transistor ◽

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

Journal of Applied Physics ◽

10.1063/1.2360379 ◽

2006 ◽

Vol 100 (8) ◽

pp. 084320 ◽

Author(s):

A. Lázaro ◽

B. Nae ◽

O. Moldovan ◽

B. Iñiguez

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Model ◽

Double Gate ◽

Effect Transistor

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Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

Journal of Applied Physics ◽

10.1063/1.1778485 ◽

2004 ◽

Vol 96 (9) ◽

pp. 5271-5276 ◽

Author(s):

D. Jiménez ◽

B. Iñíguez ◽

J. Suñé ◽

J. J. Sáenz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scaling Limits ◽

Double Gate ◽

Analog Performance ◽

Effect Transistor

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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Chinese Physics B ◽

10.1088/1674-1056/24/3/037303 ◽

2015 ◽

Vol 24 (3) ◽

pp. 037303

Author(s):

Min-Min Fan ◽

Jing-Ping Xu ◽

Lu Liu ◽

Yu-Rong Bai ◽

Yong Huang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fringing Capacitance

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Controlling the threshold voltage of a metal–oxide–semiconductor field effect transistor by molecular protonation of the Si:SiO[sub 2] interface

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491543 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1706 ◽

Author(s):

Jinman Yang ◽

L. de la Garza ◽

T. J. Thornton ◽

M. Kozicki ◽

D. Gust

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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