scholarly journals A Technique for Producing Strain-Free Flat Surfaces on Single Crystals of Ice

1970 ◽  
Vol 9 (57) ◽  
pp. 385-390 ◽  
Author(s):  
T. M Tobin ◽  
K. Itagaki

The top surface of an accurately aligned ice crystal is melted by an aluminum surface and then frozen to a warm “Lucite” plate ant! tapped free. Etch-pit development shows that the dislocation density on the resulting surface is similar to die bulk dislocation density determined by X-ray topographic methods.

1970 ◽  
Vol 9 (57) ◽  
pp. 385-390 ◽  
Author(s):  
T. M Tobin ◽  
K. Itagaki

The top surface of an accurately aligned ice crystal is melted by an aluminum surface and then frozen to a warm “Lucite” plate ant! tapped free. Etch-pit development shows that the dislocation density on the resulting surface is similar to die bulk dislocation density determined by X-ray topographic methods.


2012 ◽  
Vol 717-720 ◽  
pp. 3-8 ◽  
Author(s):  
Avinash K. Gupta ◽  
Ping Wu ◽  
Varatharajan Rengarajan ◽  
Xue Ping Xu ◽  
Murugesu Yoganathan ◽  
...  

Large-diameter SiC single crystals are grown at II-VI by the sublimation technique. 100mm substrates of semi-insulating 6H SiC and n-type 4H SiC are produced as commercial products; in development, diameter expansion to 125mm has been achieved. Over the last two years, significant improvements have been made in crystal quality. The values of FWHM of x-ray rocking curves are typically 20-40 arc-seconds for 6H SI wafers and 12-30 arc-seconds for 4H n+ wafers. Micropipe density is less than 3 cm-2, and less than 0.1 cm-2 in best substrates. Electrical resistivity of SI substrates is, typically, of 1011 Ω•cm or above. For 4H n+ substrates, the typical dislocation density is about 9×103 cm-2 and the typical BPD density is less than 1×103 cm-2.


1968 ◽  
Vol 12 ◽  
pp. 151-164
Author(s):  
M. N. Shetty ◽  
J. B. Taylor ◽  
L. D. Calvert

AbstractX-ray diffraction topographs were obtained from large arsenic single crystals. The camera employed copper Kα, radiation from a microfocus tube and an oscillating assembly of Soller slits limited the beam divergence. Reflections of the type (11) and (20) (primitive rhombohedral cell) were used to characterise dislocation Burgers vectors. The technique has been applied to arsenic single crystals grown from the vapour and from the melt. The majority of dislocations were found to belong to Burgers vectors <10>. Comparison has been made between dislocation etch pit patterns on (111) surfaces and X-ray topographs.


2019 ◽  
Vol 25 (1) ◽  
pp. 257-265 ◽  
Author(s):  
Masato Ueshima ◽  
Hirofumi Sakanakura

AbstractIn the preparation of thin sections for microscopy, embedding and polishing processes in particular can change the composition and morphologies of samples. Soils and ashes are very fragile and solvent-susceptible, and appropriate sample preparation procedures have not been well-established. To improve the existing preparation methods and make them easier and faster, we embedded freeze-dried blocks, polished, and then examined these thin-section samples using polarization microscopy, laser microscopy, and field emission scanning electron microscopy with energy-dispersive X-ray spectrometry, and electron backscattered diffraction (EBSD). Appropriate thin-section samples can be prepared by: (1) rinsing with acetone and then embedding with Spurr resin along with repeated evacuation and ventilation, rather than conventional dehydration/replacement; (2) polishing using silicon carbide paper and diamond slurries, and then wiping with a cloth and a synthetic oil; and (3) slightly rinsing with 100% ethanol to remove the oil. The preparation method minimized contamination and pores, and showed flat surfaces and sometimes EBSD patterns. Freeze-drying has been claimed to cause the development of cracks due to ice crystal formation upon freezing, however, our method not only overcomes such problems for microscopic observation but saves substantial time, taking only 2 days in total to process a specimen, and requiring less than 1 g of resin and ~1 g of sample.


1989 ◽  
Vol 152 ◽  
Author(s):  
Elmer E. Anderson ◽  
Hai- Yuin Cheng ◽  
Michael J. Edgell

ABSTRACTSingle crystals of ZnSe have been grown by the physical vapor transport method in sealed quartz ampoules. The largest crystal grown measures 1 cm x 4 mm x 2 mm and required a total growing time of 11 days. Polished wafers cut from the crystals have been etched and examined by optical microscopy, x-ray diffraction, scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and scanning Auger microscopy (SAM). No impurities or unwanted phases were detected, but frequent twinning occurs. Zn-rich {111} faces were identified by SAM. Triangular etch pits are observed on Zn {lll} faces but not on Se faces. Etch pit densities are about 104 per cm2 on slow-cooled samples but are about 100 times greater when cooling is more rapid.


2006 ◽  
Vol 527-529 ◽  
pp. 9-14 ◽  
Author(s):  
H. J. Rost ◽  
M. Schmidbauer ◽  
D. Siche

The defect distribution in 4H-SiC single crystals in dependence on the seed polarity and its off-orientation was investigated by KOH-etching, optical microscopy and X-ray topography. Micropipe density, stacking fault density and dislocation density were determined for 2” crystals grown in <000-1> direction 0 - 7° off towards <11-20> and for crystals up to 1” in diameter grown in <11-20> or a- and <1-100> or m-directions and using repeated a-face growth. For the growth in polar directions the micropipe density and dislocation density decrease with increasing offorientation of the seed. A similar behavior was found for the stacking fault density and dislocation density in non-polar directions with off-orientation to c-direction. Nevertheless, while the dislocation density could be reduced up to three orders of magnitude for the growth along non-polar directions, the stacking fault density was continuously increasing. Additionally, the defect distribution after repeated a-face growth will be discussed in terms of growth related and kinetic models.


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