Linear Defects Generated by Inclusion of Hydrogen in Nickel Electrodeposit

Author(s):  
S. Nakahara

During the course of structural characterization of nickel electrodeposit, we have found that there are a large number of linear defects which are different from dislocations. This communication reports a detailed analysis of these defects using transmission electron microscopy.Nickel film was prepared by electrodeposition from a bath containing 0.43 M NiSO4-6H2O and 0.5 M H3BO3. The pH of the bath was adjusted to 1.5. A sheet of annealed OFHC copper was used as the substrate. All the platings were carried out at 30°C.Nickel film plated at a current density of 5 MA/cm2 contained these linear Refects. Figures l(a), (b), and (c) show micrographs of the film taken with g = 200, 220, and 131, respectively. The images of the defects are indicated by four fine arrows in Fig. 1(c). They were not easily discernible with low-order g's such as 111, 200, and 220 (see Figs. 1(a) and (b)).

2005 ◽  
Vol 61 (1) ◽  
pp. 11-16 ◽  
Author(s):  
E. A. Juarez-Arellano ◽  
J. M. Ochoa ◽  
L. Bucio ◽  
J. Reyes-Gasga ◽  
E. Orozco

Single microcrystals of the new compound samarium dimanganese germanium oxide, SmMn2GeO7, were grown using the flux method in a double spherical mirror furnace (DSMF). The micrometric crystals were observed and chemically analysed with scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDX). The structural characterization and chemical analysis of these crystals were also carried out using transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM), together with electron-energy-loss spectroscopy (EELS). We found that the new quaternary compound crystallizes in the orthorhombic system with the point group mmm (D 2h ), space group Immm (No. 71) and cell parameters a = 8.30 (10), b = 8.18 (10), c = 8.22 (10) Å and V = 558.76 Å3.


2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.


Sign in / Sign up

Export Citation Format

Share Document