Damage removal following low energy ion implantation

1988 ◽  
Vol 46 ◽  
pp. 906-907
Author(s):  
Edward R. Myers
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Solid Phase ◽  
Semiconductor Industry ◽  
Amorphous Layer ◽  
Light Ions ◽  
Large Scale Integration ◽  
Amorphous Surface ◽  
Scale Integration ◽  
Spatial Locations

Ion implantation has become the most common method of doping in the semiconductor industry. Precise concentration profiles with exact spatial locations are achievable. However, direct implantation of the desired dopant does not always meet the stringent size requirements of ultra large scale integration (ULSI). Implantation of light ions, such as boron, tend to channel down open crystallographic orientations in crystalline substrates resulting in enhanced ion penetration and an extended doping tail. Channeling can be prevented by creation of an amorphous surface layer prior to the dopant implant. The amorphous layer can be created by implanting heavy isoelectronic ions, such as Ge+, or by implanting molecular dopant ions like BF2. Solid phase epitaxial (SPE) regrowth restores the crystallinity of the amorphous layer and activates the dopant. However, the ion implantation process damages the crystalline material adjacent to the amorphous- crystalline (a/c) interface.

Submicron linewidth measurement for VLSI

1988 ◽  
Vol 46 ◽  
pp. 194-195
Author(s):  
Marylyn Hoy Bennett ◽  
H. Shannon Lilley
Keyword(s):  
Large Scale ◽  
Low Voltage ◽  
Semiconductor Industry ◽  
Measurement Data ◽  
Large Scale Integration ◽  
Interaction Modeling ◽  
Linewidth Measurement ◽  
Beam Interaction ◽  
Scale Integration ◽  
Calibration Techniques

For several years, SEM-based inspection and measurement has been a necessary tool for in-process IC characterization. SEM inspection phenomena are now well understood due to sample-beam interaction modeling, instrument calibration using a NBS standard, and years of experience in low voltage applications. However, the practice of submicron very large scale integration (VLSI) linewidth measurement has outdistanced understanding of the measurement phenomena. As the automated SEM-based instrument is the only available tool, we must improve its calibration techniques. The approach commonly taken in the semiconductor industry is to calibrate instrumentation using a homemade metal pitch "standard", then characterize the SEM and linewidth measurement data on various sample substrates in relation to the "standard". Accepted methods of statistical analyses can then be applied to the data to at least insure precision and repeatability. Accuracy, however, remains unknown. There are currently significant efforts underway in the areas of linewidth measurement modeling, and fabrication on a measurement standard. Until the completion of these projects, intermediate improvements may be available.

Solid Phase Epitaxial Recrystallization of Sos, with Applications to Submicrometer Cmos and Bipolar Devices

1985 ◽  
Vol 53 ◽  
Author(s):  
P.K. Vasudev
Keyword(s):  
Large Scale ◽  
Solid Phase ◽  
Inversion Layer ◽  
Very Large Scale Integration ◽  
Epitaxial Silicon ◽  
Leakage Currents ◽  
Bipolar Devices ◽  
Propagation Delays ◽  
Large Scale Integration ◽  
Scale Integration

ABSTRACTCMOS/SOS devices and circuits were fabricated in 0.3-µm-thick epitaxial silicon-on-sapphire (SOS) films. Two solid phase epitaxial recrystallization techniques (DSPE* and SPEAR**) reduced the total microtwin concentrations in the Si layers more than ten- fold, while increasing electron and hole inversion layer mobilities between 30 and 45%. Leakage currents were substantially reduced in all SPEAR devices and in n-channel DSPE transistors, with some increase observed for p-channel DSPE devices. Drive currents and subthresholds slopes also showed significant improvement in both n- and p-devices. Propagation delays below 75 ps were obtained for CMOS/SOS inverters with Lef = 0.5 µm. The application of DSPE and SPEAR techniques to 0.3-µm SOS films will extend the scaling of CMOS/SOS to circuits with very large scale integration (VLSI) complexity.

Plant hormones, plant growth regulators

2014 ◽  
Vol 155 (26) ◽  
pp. 1011-1018 ◽  
Author(s):  
György Végvári ◽  
Edina Vidéki
Keyword(s):  
Nervous System ◽  
Growth And Development ◽  
Large Scale ◽  
Essential Role ◽  
Higher Plants ◽  
Structure And Function ◽  
Wide Sense ◽  
Large Scale Integration ◽  
Scale Integration ◽  
And Function

Plants seem to be rather defenceless, they are unable to do motion, have no nervous system or immune system unlike animals. Besides this, plants do have hormones, though these substances are produced not in glands. In view of their complexity they lagged behind animals, however, plant organisms show large scale integration in their structure and function. In higher plants, such as in animals, the intercellular communication is fulfilled through chemical messengers. These specific compounds in plants are called phytohormones, or in a wide sense, bioregulators. Even a small quantity of these endogenous organic compounds are able to regulate the operation, growth and development of higher plants, and keep the connection between cells, tissues and synergy beween organs. Since they do not have nervous and immume systems, phytohormones play essential role in plants’ life. Orv. Hetil., 2014, 155(26), 1011–1018.

Behavior Models of Voltage Differencing Inverting Buffered Amplifier and Applications in Circuit Analysis

2019 ◽  
Vol 12 (4) ◽  
pp. 298-303
Author(s):  
YongAn LI
Keyword(s):  
Large Scale ◽  
Vlsi Design ◽  
Circuit Analysis ◽  
Second Order ◽  
Very Large Scale Integration ◽  
Behavioral Models ◽  
Order Filter ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Behavior Models

Background: The symbolic nodal analysis acts as a pivotal part of the very large scale integration (VLSI) design. Methods: In this work, based on the terminal relations for the pathological elements and the voltage differencing inverting buffered amplifier (VDIBA), twelve alternative pathological models for the VDIBA are presented. Moreover, the proposed models are applied to the VDIBA-based second-order filter and oscillator so as to simplify the circuit analysis. Results: The result shows that the behavioral models for the VDIBA are systematic, effective and powerful in the symbolic nodal circuit analysis.</P>

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