Characterization of Point Defect Clusters by 2-1/2-D TEM

1975 ◽  
Vol 33 ◽  
pp. 160-161
Author(s):  
B. Mitchell ◽  
W. L. Bell
Keyword(s):  
Point Defect ◽  
Structural Defects ◽  
Size Distributions ◽  
Dislocation Loops ◽  
Number Density ◽  
Crystalline Materials ◽  
Defect Clusters ◽  
Black Spots ◽  
Point Defect Clusters

Many of the TEM studies of radiation damage in crystalline materials have been directed toward illucidating the nature, number density, and size distributions of the primary structural defects resulting from the displacement of atoms from their normal lattice sites, i.e., "black spots." The "black spots" have been identified as either nonresolvable dislocation loops or planar clusters of self interstitials or vacancies by TEM techniques and diffraction contrast theories that are described in the book by Hirsch, et al. and the reviews by Ruhle and Eyre. An indispensable part of the studies of point defect clusters is the identification of their character (vacancy or interstitial).

Characterization of Point Defect Generation, Migration and Coalescence in Irradiated SiC by Atomistic Simulation

2007 ◽  
Vol 1043 ◽  
Author(s):  
David Farrell ◽  
Noam Bernstein ◽  
Wing Kam Liu
Keyword(s):  
Point Defect ◽  
Nuclear Power ◽  
Large Scale ◽  
The United States ◽  
Ceramic Composites ◽  
Atomic Scale ◽  
Empirical Potential ◽  
Defect Clusters ◽  
Point Defect Clusters

AbstractRenewed interest in nuclear power in the United States has prompted investigations into new reactor designs, resulting in a need to gain a greater understanding of the properties of the materials which are proposed for use in next generation nuclear reactors. This presentation will focus on preliminary results of large-scale empirical potential atomistic studies into the generation of point defect clusters in 3C SiC by particle irradiation and the evolution from point defect clusters to ‘voids’ on the atomic scale. Our working definition of ‘void’ will be explained in the context of small length-scale simulations. The determination of interstitial and vacancy diffusivities for the empirical potential employed and its impact on defect coalescence will be discussed. The characterization of initial damage states for given irradiation conditions will be presented and compared to previous work on ceramics and ceramic-composites.

Characterization of point-defect clusters by TEM

1976 ◽  
Vol 24 (2) ◽  
pp. 147-152 ◽  
Author(s):  
J.B Mitchell ◽  
W.L Bell
Keyword(s):  
Point Defect ◽  
Defect Clusters ◽  
Point Defect Clusters

Diffuse X-Ray Scattering for the Study of Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
BC Larson ◽  
JF Barhorst
Keyword(s):  
Diffuse Scattering ◽  
Analytical Models ◽  
Size Distributions ◽  
Dislocation Loops ◽  
Crystalline Materials ◽  
X Ray ◽  
Analysis Techniques ◽  
Defect Clusters ◽  
X Ray Scattering

ABSTRACTX-ray diffuse scattering can be used to study the size, concentration, and nature of lattice defects and defect clusters in crystalline materials. The availability of analytical models and detailed numerical calculations for the “Huang” diffuse scattering close to Bragg reflections and the “asymptotic” diffuse scattering at somewhat larger distances from Bragg reflections has made it possible to carry out detailed analyses of the intensity and angular distribution of the diffuse scattering in terms of specific defect parameters. Accordingly, diffuse scattering has been used to study point defects, dislocation loops, and precipitates in metals, semiconductors, and insulators and has provided information on defect geometries, size distributions, and concentrations. In this paper, the theoretical framework necessary for the interpretation of the “Huang” and “asymptotic” diffuse scattering from defect clusters is presented and examples of diffuse scattering calculations for defects in silicon are given. Diffuse scattering from clustered defects in silicon is discussed in terms of the type of information available from this scattering and the relative merits of diffuse scattering as an investigative tool for defect clusters. Diffuse scattering analysis techniques for the determination of separate size distributions for vacancy and interstitial dislocation loops in silicon are presented and applied to diffuse scattering measurements on neutron irradiated silicon. Dislocation loop densities and sizes determined in the as-irradiated state and after thermal anneals are compared with electron microscopy results.

Effect of displacement cascade structure and defect mobility on the growth of point defect clusters under irradiation

2006 ◽  
Vol 351 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
C.S. Becquart ◽  
A. Souidi ◽  
C. Domain ◽  
M. Hou ◽  
L. Malerba ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Clusters ◽  
Displacement Cascade ◽  
Cascade Structure ◽  
Defect Mobility ◽  
Point Defect Clusters

Point Defect Clusters and Dislocations in FIB Irradiated Nanocrystalline Aluminum Films: An Electron Tomography and Aberration-Corrected High-Resolution ADF-STEM Study

2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  
Keyword(s):  
High Resolution ◽  
Point Defect ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Dark Field ◽  
Internal Stresses ◽  
Defect Clusters ◽  
Point Defect Clusters ◽  
Aberration Corrected

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

Al+and N+implantation in silicon carbide: a role of point defect clusters in defect evolution

2001 ◽  
Author(s):  
Peter V. Rybin ◽  
Dmitri V. Kulikov ◽  
Yuri V. Trushin ◽  
J. Petzoldt
Keyword(s):  
Silicon Carbide ◽  
Point Defect ◽  
Defect Clusters ◽  
Defect Evolution ◽  
Point Defect Clusters

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

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