X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

Study of point defects in as-grown and annealed bismuth germanate single crystals

2005 ◽  
Vol 38 (3) ◽  
pp. 448-454 ◽  
Author(s):  
G. Bhagavannarayana ◽  
A. Choubey ◽  
Yu. V. Shubin ◽  
Krishan Lal
Keyword(s):  
Point Defect ◽  
Single Crystals ◽  
Point Defects ◽  
Bismuth Germanate ◽  
Cluster Radius ◽  
X Ray ◽  
Defect Clusters ◽  
X Ray Scattering ◽  
Point Defect Clusters ◽  
Ray Scattering

Point defects and their clusters in bismuth germanate single crystals free from grain boundaries and having low density of dislocations were studied by high-resolution diffuse X-ray scattering measurements. Differences in defects in the colourless crystals (type A) and the crystals having yellow tinge (type B), which were grown with different raw materials, were investigated. In addition, interesting differences in defect structures in specimens from different regions of the same boule were investigated. Specimens with diffracting surfaces along (111), (112) and (100) planes were studied. A multicrystal X-ray diffractometer employing a well collimated and highly monochromated Mo Kα1 beam and set in (+,−,−,+) configuration was employed. The diffraction curves of all the samples were quite narrow with half-widths in the range 7–11 arcsec, which are close to the theoretically expected values, if instrumental broadenings are taken into account. The observed distribution of diffuse X-ray scattering (DXS) intensity showed that not all the point defects are isolated but a significant fraction are agglomerated into clusters. Experimental data of DXS intensity were analysed by using a phenomenological model for a small concentration of dislocation loops wherein the point defects are loosely clustered with weak interactions among them. From this analysis, the cluster radius R cl, cluster volume A cl, the number of point defects within a cluster N cl and the relative concentration of the point-defect clusters among the samples were estimated. It was observed that cluster sizes do not vary from sample to sample. However, it was found that the concentration of clusters is approximately twice in the coloured sample compared with that of the colourless sample from the same boule. Annealing of the crystals at 1273 K produced an increase in point-defect clusters by a factor of ∼200. It was accompanied by a reduction in volume of clusters by a factor of ∼0.14.

Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics

1996 ◽  
Vol 442 ◽  
Author(s):  
Mauricio Massazumi Oka ◽  
Akira Nakada ◽  
Yukio Tamai ◽  
Kei Kanemoto ◽  
Tadashi Shibata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Substrate Type ◽  
Leakage Currents ◽  
Defect Clusters ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Point Defect Clusters ◽  
Ion Species ◽  
Post Implantation

AbstractIt is shown that defects generated by ion implantation, remaining after annealing at low temperature, are deep-distributed in the bulk silicon and their amount is demonstrated to be function of the substrate type and the implanted ion species. The confirmation that defects penetrate deeply into the silicon is made by a new method that consists in damaging by ion implantation a previously formed pn junction that shows very low leakage current and has a deep junction. It is proposed that the dopants in the substrate act as nucleation centers for the formation of point defect clusters and that these clusters actually degrade the junction. It was found that point defects penetrate much more deeply in p+n junctions than in n+p junctions. It was also found that BF2+ introduces much more defects into the silicon than As+, owing to the presence of fluorine. The leakage currents at 5 V of n+p and p+n diodes made by implantation of P+ and B+, respectively, could be lowered by one to two orders of magnitude with respect to values obtained by implantation of As+ and BF2+ because the former ones produce less defects than the latter.

scholarly journals The Formation of Amorphous Silicon by Light Ion Damage

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Shih ◽  
J. Washburn ◽  
E.R. Weber ◽  
R. Gronsky
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Point Defect ◽  
Point Defects ◽  
Liquid Nitrogen Temperature ◽  
Paramagnetic Resonance ◽  
High Resolution Tem ◽  
Different Temperatures ◽  
Boron Ions ◽  
Point Defect Clusters

ABSTRACTA model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or complexes is required at the initial stage of the amorphization process. Amorphous zones can only form at the end of incoming light ion tracks when the pre-accumulated concentration of point defects reaches a critical value. Depending on the uniformity of the point defect distribution, two possibilities for the second stage of amorphization are suggested when ion implantation is performed at different temperatures.Silicon wafers implanted with boron ions below and above the critical amorphization dose at various temperatures have been investigated using cross section specimens in high resolution TEM. Complementary analyses of these specimens by Electron Paramagnetic Resonance have revealed the presence of dangling bonds in amorphous zones and point defect clusters. Extrinsic stacking faults with 1/3 <111> displacements and other smaller distortions with 1/x<111> displacements were also found to result from the amorphization process. Liquid nitrogen temperature was found to be necessary to cause complete amorphization of silicon by boron ion implantation.

scholarly journals Interface Evolution in a W/Si Multilayer after Rapid Thermal Annealing Studied by X-ray Reflectivity and Diffuse Scattering

1997 ◽  
Vol 30 (5) ◽  
pp. 642-646 ◽  
Author(s):  
M. Jergel ◽  
V. Holý ◽  
E. Majková ◽  
S. Luby ◽  
R. Senderák
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
X Rays ◽  
Interface Evolution ◽  
X Ray ◽  
Scattering Measurements ◽  
Highly Correlated

An interface study of the effect of rapid thermal annealing (RTA) in the temperature range 523–1273 K for 5–40 s on a nominally [(50 Å Si/10 Å W) × 9] amorphous multilayer (ML) deposited on an Si(100) wafer was performed by X-ray reflectivity and diffuse-scattering measurements at grazing incidence. The results of the X-ray reflectivity and diffuse-scattering measurements were evaluated by Fresnel optical computational code and within the distorted-wave Born approximation, respectively. Up to the 773 K/5 s annealing step, the r.m.s. interface roughness decreases by 30%, which brings about a reflectivity increase of 20% on the first Bragg maximum. There is a small overall increase of the r.m.s. interface roughness across the ML in the as-deposited state and the interface profiles are highly correlated. From the very beginning of RTA, the fractal interface behaviour is gradually lost and the lateral correlation length increases, this process being accompanied by a decrease of the interface conformality. This tendency continues during the 773 K/20 s annealing; however, the r.m.s. roughness evolution is reversed. During the 1023 K/5 s annealing, the interfaces are no longer `seen' by the X-rays and, during the 1273 K/5 s annealing, a total collapse of the ML structure takes place.

Interface characterization of B4C-based multilayers by X-ray grazing-incidence reflectivity and diffuse scattering

2013 ◽  
Vol 20 (3) ◽  
pp. 449-454 ◽  
Author(s):  
Hui Jiang ◽  
Zhanshan Wang ◽  
Jingtao Zhu
Keyword(s):  
Diffuse Scattering ◽  
Aging Process ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray ◽  
Interface Characterization ◽  
Quantitative Results ◽  
Fabrication And Characterization ◽  
Stable Structures

B4C-based multilayers have important applications for soft to hard X-rays. In this paper, X-ray grazing-incidence reflectivity and diffuse scattering, combining various analysis methods, were used to characterize the structure of B4C-based multilayers including layer thickness, density, interfacial roughness, interdiffusion, correlation length,etc.Quantitative results for W/B4C, Mo/B4C and La/B4C multilayers were compared. W/B4C multilayers show the sharpest interfaces and most stable structures. The roughness replications of La/B4C and Mo/B4C multilayers are not strong, and oxidations and structure expansions are found in the aging process. This work provides guidance for future fabrication and characterization of B4C-based multilayers.

Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

2000 ◽  
Vol 76 (19) ◽  
pp. 2698-2700 ◽  
Author(s):  
U. Beck ◽  
T. H. Metzger ◽  
J. Peisl ◽  
J. R. Patel
Keyword(s):  
Point Defect ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters ◽  
Ion Implanted

Clusters and Planar Defects in Boron Implanted Silicon an X-Ray Diffuse Scattering Study

2000 ◽  
Vol 610 ◽  
Author(s):  
I. Kegel ◽  
M. Sztucki ◽  
T. H. Metzger ◽  
D. Lubbert ◽  
J. Arthur ◽  
...  
Keyword(s):  
Point Defect ◽  
Diffuse Scattering ◽  
Annealing Temperature ◽  
Grazing Incidence ◽  
Stacking Fault ◽  
Planar Defects ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Integrated Intensity ◽  
Scattering Study

AbstractIn a grazing incidence x-ray diffuse scattering study of defects in boron implanted and annealed silicon we have discovered narrow rods of intensity along [111] directions. These diffuse rods of intensity arise from stacking faults formed in the early stages of annealing in the range around 1000°C. From the width of the stacking fault induced rods we can estimate their size, while the integrated intensity is a measure of the total stacking fault area in the implanted layer. Surprisingly we find that these faults initially grow in size and density and after reaching a maximum begin to dissolve and ultimately are totally annihilated. The intensity rods are distinct from the point defect or point defect cluster scattering in the tails of the Bragg peaks referred to as Huang Scattering. From the nature of the q dependence of the diffuse scattering in the Bragg tails we find unequivocal evidence for the presence of clusters in our annealed samples. The average effective size seems remarkably independent of annealing temperature. These observations will be discussed in the context of the enhanced diffusion of boron over its bulk value.

X-Ray Reflection, A New Tool for Investigating Layered Structures and Interfaces

1991 ◽  
Vol 35 (A) ◽  
pp. 127-135 ◽  
Author(s):  
Bruno Lengeler
Keyword(s):  
Angular Dependence ◽  
Diffuse Scattering ◽  
Specular Reflection ◽  
Condensed Matter ◽  
Grazing Incidence ◽  
Total Reflection ◽  
Interface Roughness ◽  
X Rays ◽  
X Ray ◽  
X Ray Absorption

AbstractAt grazing incidence all X-ray techniques become surface sensitive. Far below the angle of total reflection the X-rays penetrate only 20 to 70 Å into condensed matter. X-ray reflectivity measurements give the density and the thickness of layers on substrates and the roughness of external and internal interfaces. The diffuse scattering in the vicinity of the specular reflection gives, besides the interface roughness, also the height-height correlation of the surface. From the angular dependence of the fluorescence intensity, emitted as a consequence of X-ray absorption, the depth profile of the absorbing species can be deduced. Artificial periodic multilayers give rise to Bragg reflexes and to standing X-ray wave fields, the angular dependence of which give the distribution of atomic species in the periodic stack. A number of examples illustrate the possibilities of the technique.

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