Observation of the Sulphur Atoms in Cu2S Using HREM

1990 ◽  
Vol 48 (1) ◽  
pp. 38-39
Author(s):  
Y.D. Yu ◽  
R. Guan ◽  
K.H. Kuo ◽  
H. Hashimoto
Keyword(s):  
Electron Diffraction ◽  
Tube Wall ◽  
Present Report ◽  
Dynamic Effect ◽  
Glass Tube ◽  
Fluorite Structure ◽  
Point Of View ◽  
Electron Diffraction Analysis ◽  
Sulphur Atom ◽  
Copper Thin Film

We have indicated that the lighter atoms such as oxygen in Cu2O can be observed at the specimen with optimal thicknesses based on the dynamic effect of electron diffraction(1). This rule in principle should hold good for the imaging of other lighter atoms such as sulphur atom in Cu2S. However, this point of view needs further experimentally confirm because up to now only oxygen atoms have been observed in Cu2O and a series of new suboxides of copper and nickel (2). In addition, the sulphur atom is much heavier than oxygen one though is still lighter than copper atom. In the present report we provide such a confirmation.The crystallites of Cu2S shown in Fig.l were obtained by sulfurizing at 300°C of the copper thin film which was sealed in a glass tube with mg sulphur left on the tube wall in a vacuum of about 10-2 Pa. The energy dispersive spectrocscopy analysis indicated that they are the sulfides and the electron diffraction analysis indicated they have anti-fluorite structure.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Computers and diffraction analysis

1989 ◽  
Vol 47 ◽  
pp. 44-45
Author(s):  
J. A. Eades
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Diffraction Analysis ◽  
Electron Diffraction Analysis ◽  
Image Simulation ◽  
Correct Interpretation ◽  
High Profile ◽  
High Resolution Images ◽  
Image Simulations

For well over two decades computers have played an important role in electron microscopy; they now pervade the whole field - as indeed they do in so many other aspects of our lives. The initial use of computers was mainly for large (as it seemed then) off-line calculations for image simulations; for example, of dislocation images.Image simulation has continued to be one of the most notable uses of computers particularly since it is essential to the correct interpretation of high resolution images. In microanalysis, too, the computer has had a rather high profile. In this case because it has been a necessary part of the equipment delivered by manufacturers. By contrast the use of computers for electron diffraction analysis has been slow to prominence. This is not to say that there has been no activity, quite the contrary; however it has not had such a great impact on the field.

Determination of hydrogen ordering within the β-RH2+xphase (R= Ho, Y) using electron diffraction techniques

2000 ◽  
Vol 33 (5) ◽  
pp. 1246-1252 ◽  
Author(s):  
Elizabeth J. Grier ◽  
Amanda K. Petford-Long ◽  
Roger C. C. Ward
Keyword(s):  
Electron Diffraction ◽  
Neutron Scattering ◽  
Diffraction Pattern ◽  
Computer Simulations ◽  
Fluorite Structure ◽  
Long Range Order ◽  
Hydrogen Atoms ◽  
Ordered Structures ◽  
Diffraction Patterns

Computer simulations of the electron diffraction patterns along the [\bar{1}10] zone axes of four ordered structures within the β-RH2+xphase, withR= Ho or Y, and 0 ≤x≤ 0.25, have been performed to establish whether or not the hydrogen ordering could be detected using electron diffraction techniques. Ordered structures within otherRH2+x(R= Ce, Tb) systems have been characterized with neutron scattering experiments; however, for HoH(D)2+x, neutron scattering failed to characterize the superstructure, possibly because of the lowxconcentration or lack of long-range order within the crystal. This paper aims to show that electron diffraction could overcome both of these problems. The structures considered were the stoichiometric face-centred cubic (f.c.c.) fluorite structure (x= 0), theD1 structure (x= 0.125), theD1astructure (x= 0.2) and theD022structure (x= 0.25). In the stoichiometric structure, with all hydrogen atoms located on the tetrahedral (t) sites, only the diffraction pattern from the f.c.c. metal lattice was seen; however, for the superstoichiometric structures, with the excess hydrogen atoms ordered on the octahedral (o) sites, extra reflections were visible. All the superstoichiometric structures showed extra reflections at the (001)f.c.c.and (110)f.c.c.type positions, with structureD1 also showing extra peaks at (½ ½ ½)f.c.c.. These reflections are not seen in the simulations at similar hydrogen concentrations with the hydrogen atoms randomly occupying theovacancies.

Electron diffraction analysis of the ferroelectric aluminate sodalite Sr8[Al12O24](CrO4)2

1991 ◽  
Vol 120 (1) ◽  
pp. 261-270
Author(s):  
T. Stoto ◽  
N. Setter ◽  
P. A. Stadelmann ◽  
Z. G. Ye
Keyword(s):  
Electron Diffraction ◽  
Diffraction Analysis ◽  
Electron Diffraction Analysis
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