scholarly journals Using Multiple Contrast Mechanisms via Forescatter Electron Channeling Contrast Imaging to Resolve the Burgers Vector of GaN Threading Dislocations

2009 ◽  
Vol 15 (S2) ◽  
pp. 674-675
Author(s):  
YN Picard ◽  
ME Twigg ◽  
JD Caldwell ◽  
CR Eddy Jr. ◽  
MA Mastro ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mark E. Twigg ◽  
Yoosuf N. Picard ◽  
Joshua D. Caldwell ◽  
Charles R. Eddy ◽  
Philip G. Neudeck ◽  
...  

ABSTRACTThe interpretation of ECCI images in the forescattered geometry presents a more complex diffraction configuration than that encountered in the backscattered geometry. Determining the Kikuchi line that is the primary source of image intensity often requires more than simple inspection of the electron-channeling pattern. This problem can be addressed, however, by comparing recorded ECCI images of threading screw dislocations in 4H-SiC with simulated images. An ECCI image of this dislocation is found to give the orientation of the dominant Kikuchi line, greatly simplifying the determination of the diffraction simulation. In addition, computed images of threading screw dislocations in 4H-SiC were found to exhibit channeling contrast essentially identical to that obtained experimentally by ECCI and allowing determination of the dislocation Burgers vector.


2013 ◽  
Vol 20 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Gunasekar Naresh-Kumar ◽  
Jochen Bruckbauer ◽  
Paul R. Edwards ◽  
Simon Kraeusel ◽  
Ben Hourahine ◽  
...  

AbstractWe combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.


2009 ◽  
Vol 15 (S2) ◽  
pp. 1018-1019
Author(s):  
ME Twigg ◽  
YN Picard ◽  
JD Caldwell ◽  
CR Eddy

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


2010 ◽  
Vol 39 (6) ◽  
pp. 743-746 ◽  
Author(s):  
M. E. Twigg ◽  
Y. N. Picard ◽  
J. D. Caldwell ◽  
C. R. Eddy ◽  
M. A. Mastro ◽  
...  

2010 ◽  
Vol 16 (S2) ◽  
pp. 1558-1559
Author(s):  
RJ Kamaladasa ◽  
ME Twigg ◽  
M De Graef ◽  
YN Picard

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2007 ◽  
Vol 90 (23) ◽  
pp. 234101 ◽  
Author(s):  
Y. N. Picard ◽  
M. E. Twigg ◽  
J. D. Caldwell ◽  
C. R. Eddy ◽  
P. G. Neudeck ◽  
...  

2009 ◽  
Vol 61 (8) ◽  
pp. 773-776 ◽  
Author(s):  
Y.N. Picard ◽  
M.E. Twigg ◽  
J.D. Caldwell ◽  
C.R. Eddy ◽  
M.A. Mastro ◽  
...  

2007 ◽  
Vol 91 (9) ◽  
pp. 094106 ◽  
Author(s):  
Y. N. Picard ◽  
J. D. Caldwell ◽  
M. E. Twigg ◽  
C. R. Eddy ◽  
M. A. Mastro ◽  
...  

Author(s):  
S. J. Pennycook ◽  
P. D. Nellist ◽  
N. D. Browning ◽  
P. A. Langjahr ◽  
M. Rühle

The simultaneous use of Z-contrast imaging with parallel detection EELS in the STEM provides a powerful means for determining the atomic structure of grain boundaries. The incoherent Z-contrast image of the high atomic number columns can be directly inverted to their real space arrangement, without the use of preconceived structure models. Positions and intensities may be accurately quantified through a maximum entropy analysis. Light elements that are not visible in the Z-contrast image can be studied through EELS; their coordination polyhedra determined from the spectral fine structure. It even appears feasible to contemplate 3D structure refinement through multiple scattering calculations.The power of this approach is illustrated by the recent study of a series of SrTiC>3 bicrystals, which has provided significant insight into some of the basic issues of grain boundaries in ceramics. Figure 1 shows the structural units deduced from a set of 24°, 36° and 65° symmetric boundaries, and 24° and 45° asymmetric boundaries. It can be seen that apart from unit cells and fragments from the perfect crystal, only three units are needed to construct any arbitrary tilt boundary. For symmetric boundaries, only two units are required, each having the same Burgers, vector of a<100>. Both units are pentagons, on either the Sr or Ti sublattice, and both contain two columns of the other sublattice, imaging in positions too close for the atoms in each column to be coplanar. Each column was therefore assumed to be half full, with the pair forming a single zig-zag column. For asymmetric boundaries, crystal geometry requires two types of dislocations; the additional unit was found to have a Burgers’ vector of a<110>. Such a unit is a larger source of strain, and is especially important to the transport characteristics of cuprate superconductors. These zig-zag columns avoid the problem of like-ion repulsion; they have also been seen in TiO2 and YBa2Cu3O7-x and may be a general feature of ionic materials.


2014 ◽  
Vol 104 (23) ◽  
pp. 232111 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  

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