Application of Molecular Beam Deflection Time-of-Flight Mass Spectrometry to Peptide Analysis

2003 ◽  
Vol 75 (20) ◽  
pp. 5512-5516 ◽  
Author(s):  
Rodolphe Antoine ◽  
Isabelle Compagnon ◽  
Driss Rayane ◽  
Michel Broyer ◽  
Philippe Dugourd ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Molecular Beam ◽  
Time Of Flight ◽  
Beam Deflection ◽  
Peptide Analysis ◽  
Flight Mass Spectrometry

scholarly journals Beam deflection for temporal encoding in time-of-flight mass spectrometry

1990 ◽  
Vol 1 (6) ◽  
pp. 440-447 ◽  
Author(s):  
G.E. Yefchak ◽  
G.A. Schultz ◽  
J. Allison ◽  
C.G. Enke ◽  
J.F. Holland
Keyword(s):  
Mass Spectrometry ◽  
Time Of Flight ◽  
Beam Deflection ◽  
Flight Mass Spectrometry ◽  
Temporal Encoding

On-line fast analysis of light hydrocarbons, PAH and radicals by molecular-beam time of flight mass spectrometry

Chemosphere ◽  
2021 ◽  
pp. 130174
Author(s):  
Barbara Apicella ◽  
Antonio Tregrossi ◽  
Maria Maddalena Oliano ◽  
Carmela Russo ◽  
Anna Ciajolo
Keyword(s):  
Mass Spectrometry ◽  
Molecular Beam ◽  
Time Of Flight ◽  
Light Hydrocarbons ◽  
Fast Analysis ◽  
Flight Mass Spectrometry ◽  
On Line

Single-Photon Ionization, In Situ Optical Diagnostic Of Molecular Beam Epitaxial Growth Of GaAs

1995 ◽  
Vol 406 ◽  
Author(s):  
Adina K. Ott ◽  
Sean M. Casey ◽  
April L. Alstrin ◽  
Stephen R. Leone
Keyword(s):  
Mass Spectrometry ◽  
Real Time ◽  
Molecular Beam ◽  
Single Photon ◽  
Surface Reactions ◽  
Time Of Flight ◽  
Single Photon Ionization ◽  
Flight Mass Spectrometry ◽  
Photon Ionization

AbstractSingle-photon ionization time-of-flight mass spectrometry (SPI-TOFMS) is used in situ to monitor desorbing species and surface reactions during molecular beam epitaxy (MBE) of GaAs. In this method, the 1064 nm fundamental output of a Nd:YAG laser is tripled twice to produce 118 nm (10.5 eV) photons. The pulsed light is passed in front of a growing substrate, giving gaseous scattered molecules sufficient energy to ionize, but not fragment, them. Ionized species are detected with time-of-flight mass spectrometry. Arrangement of the experiment also allows for simultaneous real time monitoring with reflection high-energy electron diffraction (RHEED).Mass spectra are examined and analyzed to quantify fluxes and relative ionization cross sections of growth species. The real time behavior of arsenic and gallium mass signals during epitaxy is presented as a function of substrate temperature and incident gallium flux. Surface reactions are proposed to elucidate mechanisms of arsenic incorporation and compared to measured RHEED results.

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