scholarly journals Raman Spectroscopy as a Simple yet Effective Analytical Tool for Determining Fermi Energy and Temperature Dependent Fermi Shift in Silicon

Author(s):  
Chanchal Rani ◽  
Manushree Tanwar ◽  
Tanushree Ghosh ◽  
Suchita Kandpal ◽  
Devesh K. Pathak ◽  
...  
2020 ◽  
Vol 235 (6-7) ◽  
pp. 213-223
Author(s):  
Hilke Petersen ◽  
Lars Robben ◽  
Thorsten M. Gesing

AbstractThe temperature-dependent structure-property relationships of the aluminosilicate perrhenate sodalite |Na8(ReO4)2|[AlSiO4]6 (ReO4-SOD) were analysed via powder X-ray diffraction (PXRD), Raman spectroscopy and heat capacity measurements. ReO4-SOD shows two phase transitions in the investigated temperature range (13 K < T < 1480 K). The first one at 218.6(1) K is correlated to the transition of dynamically ordered $P\overline{4}3n$ (> 218.6(1 K) to a statically disordered (<218.6(1) K) SOD template in $P\overline{4}3n$. The loss of the dynamics of the template anion during cooling causes an increase of disorder, indicated by an unusual intensity decrease of the 011-reflection and an increase of the Re-O2 bond length with decreasing temperature. Additionally, Raman spectroscopy shows a distortion of the ReO4 anion. Upon heating the thermal expansion of the sodalite cage originated in the tilt-mechanism causes the second phase transition at 442(1) K resulting in a symmetry-increase from $P\overline{4}3n$ to $Pm\overline{3}n$, the structure with the sodalites full framework expansion. Noteworthy is the high decomposition temperature of 1320(10) K.


2002 ◽  
Vol 65 (23) ◽  
Author(s):  
Y. S. Lee ◽  
T. W. Noh ◽  
J. H. Park ◽  
K.-B. Lee ◽  
G. Cao ◽  
...  

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Manavendra P. Singh ◽  
Manab Mandal ◽  
K. Sethupathi ◽  
M. S. Ramachandra Rao ◽  
Pramoda K. Nayak

AbstractDiscovery of two-dimensional (2D) topological insulators (TIs) demonstrates tremendous potential in the field of thermoelectric since the last decade. Here, we have synthesized 2D TI, Sb2Te3 of various thicknesses in the range 65–400 nm using mechanical exfoliation and studied temperature coefficient in the range 100–300 K using micro-Raman spectroscopy. The temperature dependence of the peak position and line width of phonon modes have been analyzed to determine the temperature coefficient, which is found to be in the order of 10–2 cm−1/K, and it decreases with a decrease in Sb2Te3 thickness. Such low-temperature coefficient would favor to achieve a high figure of merit (ZT) and pave the way to use this material as an excellent candidate for thermoelectric materials. We have estimated the thermal conductivity of Sb2Te3 flake with the thickness of 115 nm supported on 300-nm SiO2/Si substrate which is found to be ~ 10 W/m–K. The slightly higher thermal conductivity value suggests that the supporting substrate significantly affects the heat dissipation of the Sb2Te3 flake.


Elements ◽  
2020 ◽  
Vol 16 (2) ◽  
pp. 99-104 ◽  
Author(s):  
Lutz Nasdala ◽  
Christian Schmidt

The application of Raman spectroscopy for the identification and characterization of minerals and related materials has increased appreciably during recent years. Raman spectroscopy has proven to be a most valuable and versatile analytical tool. Successful applications cover virtually all the mineralogical sub-disciplines, and have become more numerous in geochemistry. We present a general summary of present applications, illustrated by selected examples. In addition, we briefly point out several aspects of spectral acquisition, data reduction, and interpretation of Raman results that are important for the application of Raman spectroscopy as a reliable analytical tool.


2019 ◽  
Vol 288 ◽  
pp. 111065
Author(s):  
Jwmwi Basumatary ◽  
Debraj Gangopadhyay ◽  
Aparna Nath ◽  
Thingujam Kiranmala Devi

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