Wafer-Scale Growth of Pristine and Doped Monolayer MoS2 Films for Electronic Device Applications

2020 ◽  
Vol 59 (23) ◽  
pp. 17356-17363
Author(s):  
Dongsheng Wang ◽  
Yue Zhou ◽  
Hao Zhang ◽  
Rufan Zhang ◽  
Haoyu Dong ◽  
...  
ACS Nano ◽  
2017 ◽  
Vol 11 (12) ◽  
pp. 12001-12007 ◽  
Author(s):  
Hua Yu ◽  
Mengzhou Liao ◽  
Wenjuan Zhao ◽  
Guodong Liu ◽  
X. J. Zhou ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.


2011 ◽  
Vol 158 (5) ◽  
pp. K131 ◽  
Author(s):  
Jae Hyoung Park ◽  
Hoo Keun Park ◽  
Jinhoo Jeong ◽  
Woong Kim ◽  
Byoung Koun Min ◽  
...  

2018 ◽  
Vol 2 (1) ◽  
pp. 156-162 ◽  
Author(s):  
Alexei A. Zakharov ◽  
Nikolay A. Vinogradov ◽  
Johannes Aprojanz ◽  
Thi Thuy Nhung Nguyen ◽  
Christoph Tegenkamp ◽  
...  

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.


Sign in / Sign up

Export Citation Format

Share Document