Electrical Properties and Reliability of the Photo-conductive CdS Thin Films for Flexible Opto-electronic Device Applications

In this work, the investigation of structural features, spectral and electrical properties of spin-coated films of substituted lutetium bisphthalocyanine Lu ( Pc ( SR )8)2, where R = - C 6 H 13 was carried out. The current-voltage characteristics of ITO/ Lu ( Pc ( SR )8)2/ Al film sandwich structures were measured over the temperature range 120–380 K. AC electrical properties, mainly the dependence of conductance and capacitance on frequency and temperature are also discussed. Structural and electrical properties of anthracene-doped Lu ( Pc ( SR )8)2, films have also been investigated. Furthermore, optical properties of thin films of pure and anthracene-doped Lu ( Pc ( SR )8)2 films were also studied using spectroscopic ellipsometry, while atomic force microscopy (AFM) was used to study changes in films' morphology of doped films and compared with that of undoped films. Doping Lu ( Pc ( SR )8)2, films with anthracene is shown to lead to an increase in films' conductivity. These studies will provide full understanding of the physical properties of the Lu ( Pc ( SR )8)2, thin films, both doped and undoped, with the aim of exploitation in electronic device applications, such as fabrication of all organic solar cells.

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Electrical Properties and Reliability of CdS Thin Films for Flexible Opto-Electronic Device

ECS Meeting Abstracts ◽

10.1149/ma2010-02/40/2290 ◽

2010 ◽

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Electronic Device ◽

Cds Thin Films

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Structural, optical and electrical properties of Ni-doped CdS thin films prepared by spray pyrolysis

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.12.136 ◽

2013 ◽

Vol 557 ◽

pp. 53-59 ◽

Cited By ~ 83

Author(s):

A. Rmili ◽

F. Ouachtari ◽

A. Bouaoud ◽

A. Louardi ◽

T. Chtouki ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Spray Pyrolysis ◽

Optical And Electrical Properties ◽

Cds Thin Films

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Temperature and bias effects on the electrical properties of CdS thin films prepared by r.f. sputtering

Thin Solid Films ◽

10.1016/0040-6090(84)90132-9 ◽

1984 ◽

Vol 114 (4) ◽

pp. 327-334 ◽

Cited By ~ 25

Author(s):

I. Mártil ◽

G. González-Díaz ◽

F. Sánchez-Quesada

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Cds Thin Films

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A New Approach Using Artificial Substrates for Growth of High-Quality Precipitate-Free HTS Thin Films, Toward Electronic Device Applications

MRS Proceedings ◽

10.1557/proc-868-c4.4 ◽

2005 ◽

Vol 868 ◽

Author(s):

K. Endo ◽

P. Badica ◽

H. Sato ◽

H. Akoh

Keyword(s):

Thin Films ◽

Electronic Device ◽

Growth Conditions ◽

Device Fabrication ◽

Artificial Substrates ◽

High Quality ◽

New Approach ◽

Mesa Structure ◽

Device Applications ◽

And Performance

AbstractHigh quality thin films of HTS have been grown by MOCVD on substrates with artificial steps of predefined height and width. The surface of the films grown on the steps having width equal to the ‘double of the migration length' of the atomic species depositing on the substrate is totally free of precipitates: precipitates are gathered at the step edges where the free energy is lowest. The method has several advantages: it is simple, universal (it is independent of the materials, substrates, deposition technique or application) and allows control of precipitates segregates so that the quality and growth conditions of the films are the same as for the films grown on conventional substrates. The method is expected to result in new opportunities for the device fabrication, design and performance. As an example we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown on (001) SrTiO3 single crystal substrates with artificial steps of 20 μm.

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