scholarly journals Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires

2017 ◽  
Vol 121 (15) ◽  
pp. 8636-8644 ◽  
Author(s):  
Xiaoming Yuan ◽  
Dhruv Saxena ◽  
Philippe Caroff ◽  
Fan Wang ◽  
Mark Lockrey ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well

1993 ◽  
Vol 48 (23) ◽  
pp. 17599-17602 ◽  
Author(s):  
O. Brandt ◽  
K. Kanamoto ◽  
Y. Tokuda ◽  
N. Tsukada ◽  
O. Wada ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well

Pulsed laser deposition of high-quality ZnCdO epilayers and ZnCdO/ZnO single quantum well on sapphire substrate

2010 ◽  
Vol 97 (6) ◽  
pp. 061911 ◽  
Author(s):  
W. F. Yang ◽  
B. Liu ◽  
R. Chen ◽  
L. M. Wong ◽  
S. J. Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well

Study of high-quality ZnSe/GaAs/ZnSe single quantum well and ZnSe/GaAs heterostructures

1991 ◽  
Vol 115 (1-4) ◽  
pp. 333-337 ◽  
Author(s):  
S. Ramesh ◽  
N. Kobayashi ◽  
Y. Horikoshi
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well

Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities

1998 ◽  
Author(s):  
Hongdong Zhao ◽  
Guangdi Shen ◽  
Tao Yin ◽  
Changhua Chen ◽  
ZunTu Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Perpendicular Direction ◽  
Single Quantum ◽  
Single Quantum Well

MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

1996 ◽  
Author(s):  
Akihiko ISHIBASHI ◽  
Hidemi TAKEISHI ◽  
Nobuyuki UEMURA ◽  
Masahiro KUME ◽  
Yuzaburoh BAN
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Movpe Growth

Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique

2009 ◽  
Author(s):  
H. Song ◽  
J. S. Kim ◽  
E. K. Kim ◽  
Y. G. Seo ◽  
S. M. Hwang
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Layer Technique

InGaAs strained-layer single-quantum-well lasers' spontaneous emission spectra and their features

1994 ◽  
Author(s):  
E. V. Arjanov ◽  
Olga V. Danilina ◽  
Vadim P. Konyaev ◽  
Alexander S. Logginov ◽  
Vasiliy I. Shveikin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Emission Spectra ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer

Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD

1996 ◽  
Vol 423 ◽  
Author(s):  
S. P. Denbaars ◽  
S. Keller ◽  
B. P. Keller ◽  
Y. F. Wu ◽  
D. Kapolnek ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Atmospheric Pressure ◽  
Impurity Level ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Background Impurity ◽  
Direct Band ◽  
Gan Heterostructure

AbstractUsing atmospheric pressure MOCVD we have obtained high quality InGaN/GaN and AlGaN/GaN heterostructure materials and devices. For nominally undoped 4 μm thick GaN films, we obtained 300 K mobilities of 780 cm2/Vs and an unintentional background impurity level of n300K = 6*1016 cm−3. For InGaN/GaN heterostructures we have obtained direct band-edge transitions with FWHM as narrow as 7.9 nm (59 meV) for 50Å thick In0.16Ga0.84N quantum wells at 300K, which is the among the best reported values. The quantum wells display energy shifts towards shorter wavelength with decreasing well thickness, and the shift agrees with predicted quantum effects. These materials have been incorporated into InGaN single quantum well LEDs that emit at 450 nm. In addition AlGaN/GaN heterostructure materials have been incorporated into HFETs and MODFETs. Gate-drain breakdown voltage well exceeding 100 V, and extrinsic transconductance gm of up to 140 mS/mm were realized in the MODFET.

Sign in / Sign up

Export Citation Format

Share Document