We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD) (e.g., CdSe/ZnS core-shell QDs in the current work) with the SiO bonds by simply mixing QDs with hexamethyldisilazane (HMDS) under atmospheric conditions. We observed the substantial improvement of device characteristics such that the current efficiency, the maximum luminance, and the QD lifetime were improved by 1.7–1.8 times, 15–18%, and nine times, respectively, by employing this process. Based on the experimental data (e.g., energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS)), we estimated that the growth of the SiOx on the surface of QDs is self-limited: the SiOx are effective to passivate the surface defects of QDs without deteriorating the intrinsic properties including the color-purity of QDs. Second, we proposed that the emission profiling study can lead us to the fundamental understanding of charge flow in each layer of QD-LEDs. Interestingly enough, many problems related to the charge-imbalance phenomenon were simply solved by selecting the combination of thicknesses of the hole transport layer (HTL) and the electron transport layer (ETL).
Revealing the Band Structure of FAPI Quantum Dot Film and Its Interfaces with Electron and Hole Transport Layer Using Time Resolved Photoemission
