Abstract
Volatile memristors, or threshold switching devices, exhibit a diverse range of negative differential resistance (NDR) characteristics under current-controlled operation and understanding the origin of these responses is of great importance for exploring their potential as nano-scale oscillators for neuromorphic computing. Here we use a developed two-zone, parallel memristor model of NDR to undertake a systematic analysis of NDR modes in two-terminal metal-oxide-metal devices. The model assumes that the non-uniform current distribution associated with filamentary conduction can be represented by a high current density core and a lower current-density shell where the core is assumed to have a memristive response due to Poole-Frenkel conduction and the shell is represented by either a fixed resistor or a second memristive region. The detail analysis of the electrical circuits is undertaken using a lumped-element thermal model of the core-shell structure, and is shown to reproduce continuous and discontinuous NDR responses, as well as more complex compound behaviour. Finally, an interesting double-window oscillation behaviour is predicted and experimentally verified for a device with compound NDR behaviour. These results clearly identify the origin of different NDR responses and provide a strong basis for designing devices with complex NDR characteristics.
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
