Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

Mechanisms and characteristics of optimized main junction for 4H-SiC trench junction barrier Schottky (TMJBS) diodes were investigated by theories and experiments. From these simulation and experimental values, we can conclude that TMJBS device has better reverse performance, such as the best reverse blocking capability and lowest reverse surface leakage current than the conventional JBS and TJBS device while maintaining good forward characteristics. Furthermore, The large area TMJBS Diodes with high current density show the better reverse characteristics than the small area one at an acceptable forward characteristics. The TMJBS structure can significantly reduce the influence of the Schottky interface and is more suitable for manufacturing high current density and large area devices.

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Fabrication and characterization of high-current-density carbon-nanotube cold cathodes

Applied Surface Science ◽

10.1016/j.apsusc.2005.03.185 ◽

2005 ◽

Vol 251 (1-4) ◽

pp. 249-253 ◽

Cited By ~ 6

Author(s):

Chunhui Zhu ◽

Chaogang Lou ◽

Wei Lei ◽

Xiaobing Zhang

Keyword(s):

Carbon Nanotube ◽

Current Density ◽

High Current Density ◽

High Current ◽

Cold Cathodes ◽

Fabrication And Characterization

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Preparation and Characterization of CMC-PVA/PVA-SA-MePc (COOH)8/CS-PVA Bipolar Membrane Using Electrospinning Technique

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.774-776.795 ◽

2013 ◽

Vol 774-776 ◽

pp. 795-798

Author(s):

Ting Jin Zhou ◽

Min Lu ◽

Ri Yao Chen

Keyword(s):

Polyvinyl Alcohol ◽

Water Splitting ◽

Current Density ◽

Voltage Drop ◽

High Current Density ◽

High Current ◽

Bipolar Membrane ◽

Electrospinning Technique ◽

Exchange Layer

Carboxymethyl cellulose (CMC)-polyvinyl alcohol (PVA) and chitosan (CS)-polyvinyl alcohol were cross-linked by Fe3+and glutaraldehyde respectively to prepare cation exchange layer and anion exchange layer, and polyvinyl alcohol-sodium alginate (SA)-metal octocarboxyphthalocyanine (MePc (COOH)8, a kind of water splitting catalyst, here, Me stands for Fe3+or Co2+) nanofibers were prepared by electrospinning technique and introduced into the interlayer to obtain the CMC-PVA/PVA-SA-MePc (COOH)8/CS-PVA bipolar membrane (BPM). The experimental results showed that compared with the BPM without the PVA-SA-MePc (COOH)8interlayer, the water splitting efficiency at the interlayer of the CMC-PVA/PVA-SA-MePc (COOH)8/ CS-PVA BPM was obviously increased, and its membrane impedance decreased. When the concentration of FePc (COOH)8in the PVA-SA-FePc (COOH)8nanofibers was 3.0%, the trans-membrane voltage drop (IRdrop) of the CMC-PVA/PVA-SA-FePc (COOH)8/CS-PVA BPM was as low as 0.6V at a high current density of 90 mA/cm2.

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Characterization of Thick Films Formed on Slip Rings During High Current Density Operation

IEEE Transactions on Components Hybrids and Manufacturing Technology ◽

10.1109/tchmt.1981.1135785 ◽

1981 ◽

Vol 4 (1) ◽

pp. 30-35 ◽

Cited By ~ 13

Author(s):

J. Schreurs ◽

J. Johnson ◽

I. McNab

Keyword(s):

Current Density ◽

High Current Density ◽

Thick Films ◽

High Current ◽

Slip Rings

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Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.1163 ◽

2012 ◽

Vol 717-720 ◽

pp. 1163-1166 ◽

Cited By ~ 4

Author(s):

Lei Lin ◽

Jian Hui Zhao

Keyword(s):

High Current Density ◽

High Current ◽

Initial Pulse ◽

Large Area ◽

Low Leakage ◽

Low Leakage Current ◽

Pulse Testing ◽

Blocking Voltage ◽

Fabrication And Characterization

In this paper, we report a 0.1cm2 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60µm blocking layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high turn-off speed.

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Philips electron microscopes: Applications trends—design advances

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100129516 ◽

1992 ◽

Vol 50 (2) ◽

pp. 976-977

Author(s):

M.N. Thompson

Keyword(s):

Current Density ◽

High Current Density ◽

Total Current ◽

High Current ◽

Large Area ◽

Small Probe ◽

Field Emitters ◽

Chemical Resolution ◽

Electron Microscopes ◽

Reasonable Choice

Application trends in the 1990's will continue to be driven by the pursuit of materials characterisation to higher levels of structural and chemical resolution. Due to the information-limit and current-density limitations of LaB6 sources, further advancements will require better electron guns. The choice of guns includes Cold, Thermally-assisted Cold and Schottky Field Emitters. For SEM and STEM the Cold Field Emitter is a reasonable choice, because the primary criterion for small-probe techniques is current density. This logic doesn't apply to TEMs, which require both high current density for small probes and high total current for large-area illumination at various TEM magnification levels. Table 1 compares Schottky and Cold Field emitters in different applications and microscope construction. In view of its performance (Figs. 1 and 2), the Field Emission Gun is expected to have a major impact on TEM in the 1990's.

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