scholarly journals Grain Boundaries Limit the Charge Carrier Transport in Pulsed Laser Deposited α-SnWO4 Thin Film Photoabsorbers

2020 ◽  
Vol 3 (5) ◽  
pp. 4320-4330
Author(s):  
Moritz Kölbach ◽  
Hannes Hempel ◽  
Karsten Harbauer ◽  
Markus Schleuning ◽  
Andrei Petsiuk ◽  
...  
2013 ◽  
Vol 205-206 ◽  
pp. 293-298 ◽  
Author(s):  
Martin Kittler ◽  
Manfred Reiche ◽  
Hans Michael Krause

The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.


2013 ◽  
Vol 113 (4) ◽  
pp. 044515 ◽  
Author(s):  
Melanie Nichterwitz ◽  
Raquel Caballero ◽  
Christian A. Kaufmann ◽  
Hans-Werner Schock ◽  
Thomas Unold

2020 ◽  
Vol 10 (2) ◽  
pp. 343-350 ◽  
Author(s):  
Christoph Messmer ◽  
Martin Bivour ◽  
Christoph Luderer ◽  
Leonard Tutsch ◽  
Jonas Schon ◽  
...  

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