Dimethyl Sulfoxide Vapor-Assisted Cs2AgBiBr6 Homogenous Film Deposition for Solar Cell Application

Author(s):  
Mohammad Saeed Shadabroo ◽  
Hossein Abdizadeh ◽  
Mohammad Reza Golobostanfard
2013 ◽  
Vol 829 ◽  
pp. 357-361
Author(s):  
Hadi Zarei ◽  
Rasoul Malekfar

In the present report, the synthesis process of CuInxGa1-xSe2 nanoparticles as an absorption layer in tetraethylene glycol using metallic chloride and Se powder for the purpose of solar cell application. Whole processes were performed under glovebox condition. Nanoparticles sizes were achieved via manipulation of reaction temperature and various precursor concentrations. CuInxGa1-xSe2 or CIGS nanoparticles with diameters in the range of about 20-50 nm were prepared via polyol route and purified through centrifugation and precipitation processes. Then nanoparticles were dispersed to obtain stable inks that could be directly used for thin-film deposition via spin coating. Then, CIGS nanoparticles were coated on soda lime glass for fabrication of inorganic thin film solar cell via spin coating as a film. In those devices, the prepared films yielded relatively dense CuInGaSe2 films with some void spaces. For elimination of the void spaces, the nanocrystals were exposed to selenium vapor atmosphere. Filling the voids with selenium can lead to the fabrication of CIGS absorptive layers having good dense structures and high efficiency. CIGS thin films were characterized by various analytical tools, such as XRD, UV-Visible spectroscopy and SEM imaging.


2016 ◽  
Vol 4 (2) ◽  
pp. 198
Author(s):  
Joko Utomo Utomo ◽  
Ariswan Ariswan

This research aims to grow a thin film Sn(Se0.2S0.8) by evaporation method. The researcher can understand the effect of spacer variations towards the crystal structure, lattice parameter, surface morphology, and chemical composition of Sn(Se0,2S0,8) thin film. The process of Sn(Se0.2S0.8) thin film preparation was done by using the evaporation method with pressure about 2 x 10-5 mbar. The process of Sn(Se0.2S0.8) thin film deposition was performed by giving some space between the substrate and the source i.e. 25 cm, 15 cm, and 10 cm. Characterization process was performed by using X-ray Diffraction (XRD) to determine the structure and parameter of thin film, Scanning Electron Microscopy  (SEM) to determine the thin film of surface morphology, and Energy Dispersive Analysis X-Ray (EDAX)  to determine the chemical composition of the thin film. The result of XRD characterization show that the Sn(Se0.2S0.8) thin film was  polycrystalline and it has an orthorombic crystal structure, with the lattice parameter  were sample 1 (spacer 25 cm): a = 4.306 Å, b = 11.30 Å, c = 4.139 Å; sample 2 (spacer 15 cm): a = 4.286 Å, b = 11.18 Å, c = 4.123 Å; sample 3 (spacer 10 cm): a = 4.301 Å, b = 11.30 Å, c = 4.143 Å. The result of SEM characterization in the sample 2 of Sn(Se0.2S0.8) showed that the surface morphology of the sample consisted of homogeneous oval shaped grains, with the diameter size of crystal grains on the surface about 0.3 μm – 0.5 μm. The result of EDAX analysis showed that comparison of percentage of chemical composition thin film Sn(Se0.2S0.8) was 1 : 0.11 : 0.79. Keywords: evaporation method, semiconductor Sn(Se0.2S0.8), solar cell, material characteristics


2018 ◽  
Author(s):  
Pei-Ying Lin ◽  
Ming-Hsien Li ◽  
Yu-Hsien Chiang ◽  
Po-Shen Shen ◽  
Peter Chen

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  

2020 ◽  
Vol 12 (2) ◽  
pp. 02037-1-02037-6
Author(s):  
Ranjitha R. ◽  
◽  
T. K. Subramanyam ◽  
S. Pavan kumar ◽  
Nagesh M ◽  
...  

2020 ◽  
Author(s):  
Ghuzlan Sarhan Ahmed ◽  
Bushra K. H. Al-Maiyaly ◽  
Bushra H. Hussein ◽  
Hanan K. Hassun

2014 ◽  
Vol 118 (17) ◽  
pp. 8756-8765 ◽  
Author(s):  
Guohua Wu ◽  
Fantai Kong ◽  
Yaohong Zhang ◽  
Xianxi Zhang ◽  
Jingzhe Li ◽  
...  

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