Facile Photo-cross-linking System for Polymeric Gate Dielectric Materials toward Solution-Processed Organic Field-Effect Transistors: Role of a Cross-linker in Various Polymer Types

2020 ◽  
Vol 12 (27) ◽  
pp. 30600-30615 ◽  
Author(s):  
Hyeok-jin Kwon ◽  
Xiaowu Tang ◽  
Seongjun Shin ◽  
Jisu Hong ◽  
Wonkyo Jeong ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Dielectric Materials ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Cross Linker

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

The Role of Weak Molecular Dopants in Enhancing the Performance of Solution-Processed Organic Field-Effect Transistors

2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric

2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Cardanol-based polymeric gate dielectric for solution-processed organic field-effect transistors on flexible substrates

2017 ◽  
Vol 44 ◽  
pp. 144-148 ◽  
Author(s):  
Jin Woo Bae ◽  
Na Kyung Kim ◽  
Yong-Seok Choi ◽  
Eun-Ho Sohn ◽  
Jong-Chan Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Flexible Substrates ◽  
Organic Field Effect Transistors ◽  
Solution Processed

scholarly journals Role of Oxide/Metal Bilayer Electrodes in Solution Processed Organic Field Effect Transistors

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Abduleziz Ablat ◽  
Adrica Kyndiah ◽  
Geoffroy Houin ◽  
Tugbahan Yilmaz Alic ◽  
Lionel Hirsch ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Volume Resistivity ◽  
Dielectric Materials ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Metal Insulator Metal

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

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