Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer

2020 ◽  
Vol 12 (41) ◽  
pp. 46288-46295
Author(s):  
Hokyeong Jeong ◽  
Jiye Kim ◽  
Dong Yeong Kim ◽  
Jaewon Kim ◽  
Seokho Moon ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Boron Nitride ◽  
Resistive Switching ◽  
Hexagonal Boron Nitride ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge

scholarly journals Interfacial charge transfer enhancement via formation of binary molecular assemblies on electronically corrugated boron nitride

2019 ◽  
Vol 21 (47) ◽  
pp. 26146-26153 ◽  
Author(s):  
A. Tan ◽  
P. P. Zhang
Keyword(s):  
Charge Transfer ◽  
Boron Nitride ◽  
Transfer Enhancement ◽  
Interfacial Coupling ◽  
Molecular Assemblies ◽  
Interfacial Charge Transfer ◽  
Intermolecular Charge Transfer ◽  
Weakly Interacting ◽  
Donor Acceptor ◽  
Interfacial Charge

A weakly interacting substrate can significantly perturb the intermolecular charge transfer thus properties of donor–acceptor molecular assemblies via interfacial coupling.

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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