Si(C≡C)4-Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device

2016 ◽  
Vol 8 (26) ◽  
pp. 16551-16554 ◽  
Author(s):  
Ming-Jun Sun ◽  
Xinrui Cao ◽  
Zexing Cao
Keyword(s):  
Wide Bandgap ◽  
Single Crystalline ◽  
Wide Bandgap Material ◽  
Crystalline Semiconductor ◽  
Semiconductor Diamond

4461783 Non-single-crystalline semiconductor layer on a substrate and method of making same

Vacuum ◽  
1985 ◽  
Vol 35 (1) ◽  
pp. 60
Author(s):  
Shunpei Yamazaki
Keyword(s):  
Semiconductor Layer ◽  
Single Crystalline ◽  
Crystalline Semiconductor

Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features

Optik ◽  
2017 ◽  
Vol 143 ◽  
pp. 150-157 ◽  
Author(s):  
Yuki Usui ◽  
Tomohisa Oya ◽  
Go Okada ◽  
Noriaki Kawaguchi ◽  
Takayuki Yanagida
Keyword(s):  
Single Crystalline ◽  
Crystalline Semiconductor

Applications and synthesis of zinc oxide: An emerging wide bandgap material

2013 ◽  
Author(s):  
Babar Hussain ◽  
M. Yasin Akhtar Raja ◽  
Na Lu ◽  
Ian Ferguson
Keyword(s):  
Zinc Oxide ◽  
Wide Bandgap ◽  
Wide Bandgap Material

Fabrication of Single-Crystalline Semiconductor CdS Nanobelts by Vapor Transport

2004 ◽  
Vol 108 (22) ◽  
pp. 7002-7005 ◽  
Author(s):  
Jun Zhang ◽  
Feihong Jiang ◽  
Lide Zhang
Keyword(s):  
Vapor Transport ◽  
Single Crystalline ◽  
Crystalline Semiconductor ◽  
Cds Nanobelts

The Study of Optical and Electrical Properties of a-SiC:H for Multi-junction Si Thin Film Solar Cell

2010 ◽  
Vol 1245 ◽  
Author(s):  
Jenny H. Shim ◽  
W.K. Yoon ◽  
S.T. Hwang ◽  
S.W. Ahn ◽  
H.M. Lee
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Deposition Condition ◽  
Wide Bandgap Material ◽  
Pressure Regime

AbstractStudies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.

193nm high power lasers for the wide bandgap material processing

2017 ◽  
Author(s):  
Junichi Fujimoto ◽  
Masakazu Kobayashi ◽  
Koji Kakizaki ◽  
Hiroaki Oizumi ◽  
Toshio Mimura ◽  
...  
Keyword(s):  
Material Processing ◽  
High Power ◽  
Wide Bandgap ◽  
High Power Lasers ◽  
Wide Bandgap Material

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

2017 ◽  
Vol 5 (33) ◽  
pp. 8338-8354 ◽  
Author(s):  
Munho Kim ◽  
Jung-Hun Seo ◽  
Uttam Singisetti ◽  
Zhenqiang Ma
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Free Standing ◽  
Wide Band Gap ◽  
Single Crystalline ◽  
Crystalline Semiconductor ◽  
Recent Advances ◽  
Wide Band Gap Semiconductors

Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications.

Wide-Bandgap μc-Si:H/Single-Crystalline Si Abrupt Heterojunction by Si Surface Modification

1990 ◽  
Author(s):  
K. SASAKI ◽  
Y. KUBOTA ◽  
T. MIYAJIMA ◽  
S. FURUKAWA
Keyword(s):  
Surface Modification ◽  
Wide Bandgap ◽  
Single Crystalline
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