Applications and synthesis of zinc oxide: An emerging wide bandgap material

2013 ◽  
Author(s):  
Babar Hussain ◽  
M. Yasin Akhtar Raja ◽  
Na Lu ◽  
Ian Ferguson
Keyword(s):  
Zinc Oxide ◽  
Wide Bandgap ◽  
Wide Bandgap Material

scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis

2017 ◽  
Vol 17 (01n02) ◽  
pp. 1760015 ◽  
Author(s):  
Anju Anna Jacob ◽  
L. Balakrishnan ◽  
S. R. Meher ◽  
K. Shambavi ◽  
Z. C. Alex
Keyword(s):  
Zinc Oxide ◽  
Energy Dispersive Spectrometer ◽  
Ultra Violet ◽  
Wide Bandgap ◽  
Precipitation Method ◽  
Cutoff Wavelength ◽  
X Ray ◽  
Wide Bandgap Semiconductor ◽  
Co Precipitation ◽  
Scanning Electron

Zinc oxide (ZnO) is a wide bandgap semiconductor with excellent photoresponse in ultra-violet (UV) regime. Tuning the bandgap of ZnO by alloying with cadmium can shift its absorption cutoff wavelength from UV to visible (Vis) region. Our work aims at synthesis of Zn[Formula: see text]CdxO nanoparticles by co-precipitation method for the fabrication of photodetector. The properties of nanoparticles were analyzed using X-ray diffractometer, UV–Vis spectrometer, scanning electron microscope and energy dispersive spectrometer. The incorporation of cadmium without altering the wurtzite structure resulted in the red shift in the absorption edge of ZnO. Further, the photoresponse characteristics of Zn[Formula: see text]CdxO nanopowders were investigated by fabricating photodetectors. It has been found that with Cd alloying the photosensitivity was increased in the UVA-violet as well in the blue region.

The Study of Optical and Electrical Properties of a-SiC:H for Multi-junction Si Thin Film Solar Cell

2010 ◽  
Vol 1245 ◽  
Author(s):  
Jenny H. Shim ◽  
W.K. Yoon ◽  
S.T. Hwang ◽  
S.W. Ahn ◽  
H.M. Lee
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Deposition Condition ◽  
Wide Bandgap Material ◽  
Pressure Regime

AbstractStudies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.

193nm high power lasers for the wide bandgap material processing

2017 ◽  
Author(s):  
Junichi Fujimoto ◽  
Masakazu Kobayashi ◽  
Koji Kakizaki ◽  
Hiroaki Oizumi ◽  
Toshio Mimura ◽  
...  
Keyword(s):  
Material Processing ◽  
High Power ◽  
Wide Bandgap ◽  
High Power Lasers ◽  
Wide Bandgap Material

Voltage Dependent Field Emission Energy Distribution Analysis of Wide Bandgap Materials

1998 ◽  
Vol 509 ◽  
Author(s):  
B.L. Mccarson ◽  
R. Schlesser ◽  
Z. Sitar
Keyword(s):  
Energy Distribution ◽  
Field Emission ◽  
Electron Emission ◽  
Wide Bandgap ◽  
Emission Energy ◽  
Wide Bandgap Material ◽  
Voltage Dependent ◽  
Feed Analysis ◽  
Wide Bandgap Materials ◽  
Dependent Field

AbstractField emission from wide bandgap materials was investigated through voltage dependent field emission energy distribution (V-FEED) analysis. As compared to classical I-V characterization, V-FEED analysis can provide additional, detailed information about the origin of and the mechanism responsible for the field emission of electrons. The V-FEED technique consists of measuring the energy distribution of field emitted electrons collected at various extraction voltages. By measuring changes in the energy of the field emission peak at different voltages, data can be extrapolated to flat-band condition to determine the energy of the band from which the electron emission originated. In this study, field emission from cubic boron nitride (c-BN) coated and diamond coated tip-shaped Mo emitters was examined. For the nominally intrinsic wide bandgap coating materials studied, a linear voltage drop across the wide bandgap material, usually on the order of 1% of extraction voltage was observed and explained by field induced band-bending. For the intrinsic c-BN and diamond samples studied, the electron emission originated from the conduction band minimum at the wide bandgap material/vacuum interface.

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