AbstractStudies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.
We report a new series of wide band-gap small organic molecules as donor-materials featuring an indaceno[1,2-b:5,6-b′]dithiophene (IDT) core and fluorinated thiophene linkers for solution-processed organic solar cells.
Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices
