Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b14768 ◽

2018 ◽

Vol 10 (11) ◽

pp. 9782-9791 ◽

Author(s):

Premlal Balakrishna Pillai ◽

Ashwani Kumar ◽

Xiaoyao Song ◽

Maria Merlyne De Souza

Keyword(s):

Thin Film ◽

Solid Electrolyte ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Charge Storage ◽

Zinc Oxide Thin Film ◽

Diffusion Controlled

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High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF07 ◽

Author(s):

Yu Tian ◽

Dedong Han ◽

Suoming Zhang ◽

Fuqing Huang ◽

Dongfang Shan ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

Procedia Manufacturing ◽

10.1016/j.promfg.2019.02.278 ◽

2019 ◽

Vol 32 ◽

pp. 729-733 ◽

Author(s):

Abdelhafid Marroun ◽

Naima Amar Touhami ◽

Taj-eddin El Hamadi ◽

Moustapha El Bakkali

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Anodic Aluminum Oxide ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Anodic Aluminum ◽

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High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO2 gate insulator

Thin Solid Films ◽

10.1016/j.tsf.2016.04.017 ◽

2016 ◽

Vol 614 ◽

pp. 52-55 ◽

Author(s):

Yang Song ◽

A. Zaslavsky ◽

D.C. Paine

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Insulator ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide

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Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance

Solid-State Electronics ◽

10.1016/j.sse.2014.07.013 ◽

2015 ◽

Vol 103 ◽

pp. 195-198 ◽

Author(s):

Jae Chul Park ◽

Ho-Nyeon Lee

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide

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High-performance amorphous indium–gallium–zinc oxide thin-film transistors with polymer gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2012.03.101 ◽

2012 ◽

Vol 520 (16) ◽

pp. 5455-5458 ◽

Author(s):

C.J. Chiu ◽

S.P. Chang ◽

S.J. Chang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectric ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2017.06.023 ◽

2017 ◽

Vol 136 ◽

pp. 43-50 ◽

Author(s):

Yang Song ◽

Alexander Katsman ◽

Amy L. Butcher ◽

David C. Paine ◽

Alexander Zaslavsky

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide ◽

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High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

Applied Physics Letters ◽

10.1063/1.2975959 ◽

2008 ◽

Vol 93 (8) ◽

pp. 082102 ◽

Author(s):

Wantae Lim ◽

Jung Hun Jang ◽

S.-H. Kim ◽

D. P. Norton ◽

V Craciun ◽

...

Keyword(s):

Thin Film ◽

Polyethylene Terephthalate ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ej07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EJ07 ◽

Author(s):

Dongfang Shan ◽

Dedong Han ◽

Fuqing Huang ◽

Yu Tian ◽

Suoming Zhang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

High Stability ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Aluminum Doped Zinc Oxide

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High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation

Current Applied Physics ◽

10.1016/j.cap.2018.06.003 ◽

2018 ◽

Vol 18 (9) ◽

pp. 1080-1086 ◽

Author(s):

Min-Soo Kang ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectric ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With $\hbox{HfO}_{x}\hbox{N}_{y}/\hbox{HfO}_{2}/\hbox{HfO}_{x}\hbox{N}_{y}$ Tristack Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2010.2089426 ◽

2011 ◽

Vol 32 (1) ◽

pp. 42-44 ◽

Author(s):

Longyan Yuan ◽

Xiao Zou ◽

Guojia Fang ◽

Jiawei Wan ◽

Hai Zhou ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectrics ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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