Hybrid Assembly toward Enhanced Thermal Stability of Virus-like Particles and Antibacterial Activity of Polyoxometalates

2018 ◽  
Vol 10 (7) ◽  
pp. 6137-6145 ◽  
Author(s):  
Ding-Yi Fu ◽  
Simin Zhang ◽  
Zhiyu Qu ◽  
Xianghui Yu ◽  
Yuqing Wu ◽  
...  
2013 ◽  
Vol 750-752 ◽  
pp. 1609-1612 ◽  
Author(s):  
Yang Ti ◽  
Jian Ru Wu ◽  
Da Jun Chen

In this paper, Fe-OCAP/PU blends were prepared. The mechanical properties and thermal stability of the samples were studied by tensile tests and thermogravimetric analysis, respectively. Results showed that the mechanical properties and thermal stability of the samples were improved with the increase of Fe-OCAP content. The antibacterial property of Fe-OCAP and Fe-OCAP/PU films was investigated by agar diifusion method and shake flask method, respectively. Fe-OCAP and Fe-OCAP/PU films showed efficient antibacterial activity againstS.aureus.


BioResources ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 415-428
Author(s):  
Qiyuan Chen ◽  
Shengling Xiao ◽  
Sheldon Q. Shi ◽  
Liping Cai

A water and organic soluble N-benzyl-N,N-diethyl quaternized chitosan (NSQC) material was synthesized using chitosan, benzaldehyde, and bromoethane. Amino groups on chitosan reacted with benzaldehyde to form a Schiff base intermediate. Quaternized chitosan was obtained by reacting the Schiff base with bromoethane. The quaternized chitosan was dissolved in an organic solution with dissolved cellulose and cast to prepare quaternized chitosan/cellulose (QCC) film. The molecular structure, morphology, tensile strength, thermal stability, and antibacterial activity effects of NSQC-treated cellulose film were studied in detail. The results showed that the NSQC product exhibited superior solubility in deionized water and dimethylacetamide. The addition of NSQC as a reinforcing agent in QCC film enhanced the interlinking of fibers and slowed down the rate of cellulose pyrolysis, which improved the tensile properties and thermal stability of the cellulose film. The minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) values of NSQC showed that it had good antibacterial activity against Staphylococcus aureus and Escherichia coli. The QCC film also showed contact sterilization ability with regards to two kinds of bacteria, which suggested that QCC film has the potential for applications in food packaging and bacterial barriers.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

Sign in / Sign up

Export Citation Format

Share Document