Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

2018 ◽  
Vol 10 (43) ◽  
pp. 37651-37660 ◽  
Author(s):  
Siqian Li ◽  
Huaping Lei ◽  
Yi Wang ◽  
Md Barkat Ullah ◽  
Jun Chen ◽  
...  
Keyword(s):  
Domain Boundary ◽  
Inversion Domain

Faceted inversion domain boundary in GaN films doped with Mg

2000 ◽  
Vol 77 (16) ◽  
pp. 2479-2481 ◽  
Author(s):  
L. T. Romano ◽  
J. E. Northrup ◽  
A. J. Ptak ◽  
T. H. Myers
Keyword(s):  
Domain Boundary ◽  
Inversion Domain

Optical properties of self assembled GaN polarity inversion domain boundary

2011 ◽  
Vol 99 (2) ◽  
pp. 021103 ◽  
Author(s):  
M.-C. Liu ◽  
Y.-J. Cheng ◽  
J.-R. Chang ◽  
S.-C. Hsu ◽  
C.-Y. Chang
Keyword(s):  
Optical Properties ◽  
Domain Boundary ◽  
Polarity Inversion ◽  
Inversion Domain ◽  
Self Assembled

scholarly journals Zintl-phase Eu2ZnSb2: A promising thermoelectric material with ultralow thermal conductivity

2019 ◽  
Vol 116 (8) ◽  
pp. 2831-2836 ◽  
Author(s):  
Chen Chen ◽  
Wenhua Xue ◽  
Shan Li ◽  
Zongwei Zhang ◽  
Xiaofang Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Material ◽  
Thermoelectric Materials ◽  
Lattice Thermal Conductivity ◽  
Domain Boundary ◽  
Zn Deficiency ◽  
Zintl Phase ◽  
Medium Temperature ◽  
Inversion Domain ◽  
Electron Crystal

Zintl compounds are considered to be potential thermoelectric materials due to their “phonon glass electron crystal” (PGEC) structure. A promising Zintl-phase thermoelectric material, 2-1-2–type Eu2ZnSb2 (P63/mmc), was prepared and investigated. The extremely low lattice thermal conductivity is attributed to the external Eu atomic layers inserted in the [Zn2Sb2]2- network in the structure of 1-2-2–type EuZn2Sb2(P3¯m1), as well as the abundant inversion domain boundary. By regulating the Zn deficiency, the electrical properties are significantly enhanced, and the maximum ZT value reaches ∼1.0 at 823 K for Eu2Zn0.98Sb2. Our discovery provides a class of Zintl thermoelectric materials applicable in the medium-temperature range.

Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary

2011 ◽  
Vol 1324 ◽  
Author(s):  
Mei-Chun Liu ◽  
Yuh-Jen Cheng ◽  
Jet-Rung Chang ◽  
Chun-Yen Chang
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Domain Boundary ◽  
Mbe Growth ◽  
Polarity Inversion ◽  
Circular Pattern ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Self Assembled ◽  
Inversion Domain Boundaries

ABSTRACTWe report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

Spontaneous inversion of in-plane polarity ofa-oriented GaN domains laterally overgrown on patternedr-plane sapphire substrates

2013 ◽  
Vol 46 (2) ◽  
pp. 443-447 ◽  
Author(s):  
Donggyu Shin ◽  
Sanghwa Lee ◽  
Miyeon Jue ◽  
Wooyoung Lee ◽  
Soyoung Oh ◽  
...  
Keyword(s):  
Circular Hole ◽  
Sapphire Substrate ◽  
Domain Boundary ◽  
Crystallographic Analysis ◽  
Polarity Inversion ◽  
Spontaneous Formation ◽  
Sapphire Substrates ◽  
Inverted Orientation ◽  
Inversion Domain ◽  
First Time

Spontaneously regulated in-plane polarity inversion ofa-oriented GaN domains has been demonstrated for the first time. Crystallographic analysis revealed that each domain grown on circular-hole-patternedr-plane sapphire substrates has basal faces with oppositely oriented in-plane polarity. The inverted orientation of in-plane polarity on the opposite basal faces is not due to merging between in-plane polarity-inverted domains nucleated on the patternedr-plane sapphire substrate, but it was found to be due to spontaneous formation of an inversion domain boundary on the growth fronts of existing domains. This result provides new insights into controlling the in-plane polarity ofa-oriented GaN, because the nucleation of in-plane polarity-inverted domains ofa-oriented GaN onr-plane sapphire is symmetrically not allowed.

Structural stability and electronic properties of the (0 0 0 1) inversion domain boundary in III-nitrides

2018 ◽  
Vol 154 ◽  
pp. 152-158
Author(s):  
Siqian Li ◽  
Huaping Lei ◽  
Pierre-Matthieu Anglade ◽  
Jun Chen ◽  
Pierre Ruterana
Keyword(s):  
Electronic Properties ◽  
Structural Stability ◽  
Domain Boundary ◽  
Inversion Domain

Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates

2009 ◽  
Vol 24 (10) ◽  
pp. 3032-3037 ◽  
Author(s):  
Kyu Hyung Lee ◽  
Jeong Yong Lee ◽  
Y.H. Kwon ◽  
Tae Won Kang ◽  
J.H. You ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Polar Region ◽  
Domain Boundary ◽  
Hydride Vapor Phase Epitaxy ◽  
Slow Growth Rate ◽  
Selected Area Electron Diffraction ◽  
Inversion Domain ◽  
Transmission Electron ◽  
The One ◽  
Inversion Domain Boundaries

Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The formation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference.

Erratum: Electronic-structure study of the (110) inversion domain boundary in SiC

1990 ◽  
Vol 42 (2) ◽  
pp. 1462-1462 ◽  
Author(s):  
Walter R. L. Lambrecht ◽  
Benjamin Segall
Keyword(s):  
Electronic Structure ◽  
Domain Boundary ◽  
Structure Study ◽  
Inversion Domain

Structure of the {1120} inversion domain boundary in GaN

1999 ◽  
Vol 273-274 ◽  
pp. 130-133 ◽  
Author(s):  
John E. Northrup
Keyword(s):  
Domain Boundary ◽  
Inversion Domain
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