2D-to-3D Shape Transformation of Room-Temperature-Programmable Shape-Memory Polymers through Selective Suppression of Strain Relaxation

2018 ◽  
Vol 10 (46) ◽  
pp. 40189-40197 ◽  
Author(s):  
Guo Li ◽  
Shuwei Wang ◽  
Zhaotie Liu ◽  
Zhongwen Liu ◽  
Hesheng Xia ◽  
...  
2021 ◽  
Vol 7 (9) ◽  
pp. 123
Author(s):  
Sanne J. M. van Vilsteren ◽  
Hooman Yarmand ◽  
Sepideh Ghodrat

Magnetic soft materials (MSMs) and magnetic shape memory polymers (MSMPs) have been some of the most intensely investigated newly developed material types in the last decade, thanks to the great and versatile potential of their innovative characteristic behaviors such as remote and nearly heatless shape transformation in the case of MSMs. With regard to a number of properties such as shape recovery ratio, manufacturability, cost or programming potential, MSMs and MSMPs may exceed conventional shape memory materials such as shape memory alloys or shape memory polymers. Nevertheless, MSMs and MSMPs have not yet fully touched their scientific-industrial potential, basically due to the lack of detailed knowledge on various aspects of their constitutive response. Therefore, MSMs and MSMPs have been developed slowly but their importance will undoubtedly increase in the near future. This review emphasizes the development of MSMs and MSMPs with a specific focus on the role of the magnetic particles which affect the shape memory recovery and programming behavior of these materials. In addition, the synthesis and application of these materials are addressed.


2019 ◽  
Vol 11 (33) ◽  
pp. 30308-30316 ◽  
Author(s):  
Shuwei Wang ◽  
Guo Li ◽  
Zhaotie Liu ◽  
Zhongwen Liu ◽  
Jinqiang Jiang ◽  
...  

2017 ◽  
Vol 9 (3) ◽  
pp. 031001 ◽  
Author(s):  
Wilhelmus J Hendrikson ◽  
Jeroen Rouwkema ◽  
Federico Clementi ◽  
Clemens A van Blitterswijk ◽  
Silvia Farè ◽  
...  

2017 ◽  
Vol 9 (6) ◽  
pp. 5457-5467 ◽  
Author(s):  
Yin Fang ◽  
Sin-Yen Leo ◽  
Yongliang Ni ◽  
Junyu Wang ◽  
Bingchen Wang ◽  
...  

Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.


2008 ◽  
Author(s):  
Bernhard Hiebl ◽  
Dorothee Rickert ◽  
Rosemarie Fuhrmann ◽  
Friedrich Jung ◽  
Andres Lendlein ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document