The described investigations are focused on peroxides occurring as products in atmospheric chemical processes, namely, hydrogen peroxide, methylhydroperoxide, hydroxymethylhydroperoxide, bis-(hydroxymethyl)peroxide, 1-hydroxyethylhydroperoxide, bis-(hydroxyethyl)peroxide, and hydroxymethylmethylperoxide. The compounds are identified and determined through the position and intensity of their characteristic O–O stretching bands in the range between 767 and 878 cm−1. Time-resolved Raman spectroscopy of peroxide solutions permits the in situ investigation of pathways and kinetics of reactions between peroxides and aldehydes.
Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.