Atomic Layer Deposition Route To Tailor Nanoalloys of Noble and Non-noble Metals

ACS Nano ◽  
2016 ◽  
Vol 10 (9) ◽  
pp. 8770-8777 ◽  
Author(s):  
Ranjith K. Ramachandran ◽  
Jolien Dendooven ◽  
Matthias Filez ◽  
Vladimir V. Galvita ◽  
Hilde Poelman ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Atomic Layer ◽  
Layer Deposition

ChemInform Abstract: Atomic Layer Deposition of Noble Metals and Their Oxides

ChemInform ◽  
2014 ◽  
Vol 45 (11) ◽  
pp. no-no
Author(s):  
Jani Haemaelaeinen ◽  
Mikko Ritala ◽  
Markku Leskelae
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Nucleation and Growth of Noble Metals on Oxide Surfaces Using Atomic Layer Deposition

2019 ◽  
Vol 3 (15) ◽  
pp. 271-278 ◽  
Author(s):  
J. W. Elam ◽  
A. V. V. Zinovev ◽  
Michael J. Pellin ◽  
David J. Comstock ◽  
Mark C. Hersam
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Oxide Surfaces ◽  
Layer Deposition

scholarly journals Area-Selective Atomic Layer Deposition of Noble Metals: Polymerized Fluorocarbon Layers as Effective Growth Inhibitors

2019 ◽  
Author(s):  
Petro Deminskyi ◽  
Ali Haider ◽  
Hamit Eren ◽  
Talha Masood Khan ◽  
Necmi Biyikli
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Growth Inhibitors ◽  
Selective Deposition ◽  
Layer Deposition ◽  
Assembled Monolayers ◽  
Film Nucleation ◽  
Effective Growth

<p>Selective deposition is a powerful self-aligned precision materials processing strategy which can hugely benefit next-generation nanoelectronics, catalysis, and energy conversion/storage fields. Atomic layer deposition (ALD) is showing a significant promise in enabling area-selective deposition using various growth blocking layers including self-assembled monolayers (SAMs) and various polymers. However, these blocking layers are not compatible with energetic co-reactants like ozone and plasma radicals, showing relatively fast degradation and losing their growth inhibition character. In this work, we demonstrate that polymerized fluorocarbon surfaces function as effective growth inhibitors for ALD-grown Pt and Pd films. Besides effectively inhibiting film growth with considerable nucleation delays for, Pt experiments revealed that polymerized CF<sub>x</sub> layers are also ozone-compatible. To the best of our knowledge, this is the first demonstration of an AS-ALD process using ozone as co-reactant for noble metals. In our manuscript, we detail our observations of (Pt,Pd) film nucleation evolution and self-aligned deposition experiments on patterned samples. We have performed in-depth chemical and surface characterizations along the nucleation studies and self-aligned patterning experiments.</p>

Atomic Layer Deposition of Noble Metals and Their Oxides

2013 ◽  
Vol 26 (1) ◽  
pp. 786-801 ◽  
Author(s):  
Jani Hämäläinen ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Atomic Layer ◽  
Layer Deposition
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