Radiation Degradation and Film Solubility Rates of Poly(butene-1-sulfone)

1982 ◽  
pp. 19-27 ◽  
Author(s):  
LARRY STILLWAGON
Keyword(s):  
Radiation Degradation ◽  
Film Solubility

Radiation degradation of solar cells based on InPCdS heterojunctions

1990 ◽  
Vol 20 (5-6) ◽  
pp. 359-365 ◽  
Author(s):  
V.M. Botnaryuk ◽  
L.V. Gorchiak ◽  
G.M. Grigorieva ◽  
M.B. Kagan ◽  
T.A. Kozyreva ◽  
...  
Keyword(s):  
Solar Cells ◽  
Radiation Degradation

Investigation on radiation degradation of carboxymethylcellulose by ionizing irradiation

2009 ◽  
Vol 67 (7-8) ◽  
pp. 1513-1515 ◽  
Author(s):  
Hee-Sub Lee ◽  
Jong-Il Choi ◽  
Jae-Hun Kim ◽  
Kwang-Won Lee ◽  
Young-Jin Chung ◽  
...  
Keyword(s):  
Ionizing Irradiation ◽  
Radiation Degradation

Radiation degradation of plastic insulating materials

1995 ◽  
Vol 46 (4-6) ◽  
pp. 797-800
Author(s):  
B. Bartoníček ◽  
V. Hnát ◽  
I. Janovský ◽  
R. Pejša
Keyword(s):  
Insulating Materials ◽  
Radiation Degradation

scholarly journals Prediction of radiation degradation of Si detectors irradiated by relativistic ions of different masses

2021 ◽  
Vol 2103 (1) ◽  
pp. 012068
Author(s):  
D Mitina ◽  
E Verbitskaya ◽  
I Eremin ◽  
N Fadeeva
Keyword(s):  
Energy Range ◽  
Total Energy ◽  
Radiation Damage ◽  
Silicon Material ◽  
Radiation Degradation

Abstract The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7Li to 208 GeV for 208Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.

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