Prediction of radiation degradation of Si detectors irradiated by relativistic ions of different masses
2021 ◽
Vol 2103
(1)
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pp. 012068
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Abstract The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7Li to 208 GeV for 208Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.
1979 ◽
Vol 86
(3-4)
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pp. 395-398
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1938 ◽
Vol 237
(773)
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pp. 67-104
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2020 ◽
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Electron irradiation facility for the study of radiation damage in large solar cell arrays in the energy range 0.5
2005 ◽
Vol 87
(1-4)
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pp. 629-636
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2002 ◽
Vol 64
(5-6)
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pp. 359-367
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2014 ◽
Vol 97
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pp. 337-340
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