Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation

2018 ◽  
Vol 386 ◽  
pp. 27-32 ◽  
Author(s):  
Anna A. Spirina ◽  
Igor Neizvestny ◽  
Nataliya L. Shwartz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Morphology ◽  
Indium Arsenide ◽  
Transformation Kinetic ◽  
High Temperature Annealing ◽  
Vicinal Surface ◽  
Evaporation Temperature ◽  
Terrace Width

The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.

scholarly journals FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION)

2021 ◽  
Author(s):  
Nataliya Shwartz ◽  
Anna Spirina
Keyword(s):  
Monte Carlo Simulation ◽  
Gallium Arsenide ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Relief ◽  
Surface Defects ◽  
High Temperature Annealing ◽  
Morphological Transformations

In this work, simulation of high-temperature annealing of GaAs (111) substrates has been carried out. The dependences of the substrate morphological transformations on the temperature and the presence of surface defects are analyzed.

scholarly journals Changes in surface morphology of helium-induced tungsten nanostructure during high-temperature annealing

2020 ◽  
Vol 22 ◽  
pp. 100730 ◽  
Author(s):  
Chun-Shang Wong ◽  
Josh A. Whaley ◽  
Takuro Wada ◽  
Sakumi Harayama ◽  
Yasuhisa Oya ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
High Temperature Annealing

A Monte Carlo Simulation of the High-Temperature Phases of Poly(p-hydroxybenzoic acid)

1995 ◽  
Vol 28 (21) ◽  
pp. 7075-7084 ◽  
Author(s):  
Stephen H. Foulger ◽  
Gregory C. Rutledge
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Hydroxybenzoic Acid

Epitaxial TaC Films for the Selective Area Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 183-186 ◽  
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad ◽  
M. Ervin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Lattice Parameter ◽  
Selective Area Growth ◽  
Recrystallization Process ◽  
High Temperature Annealing ◽  
Selective Area ◽  
Area Growth ◽  
Lattice Matched

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures

2005 ◽  
Vol 108-109 ◽  
pp. 457-462 ◽  
Author(s):  
Mariya G. Ganchenkova ◽  
V.A. Borodin ◽  
S. Nicolaysen ◽  
Risto M. Nieminen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Ab Initio Calculations ◽  
Formation Energy ◽  
Lattice Parameter ◽  
Vacancy Formation Energy ◽  
Vacancy Formation ◽  
Parameter Mismatch ◽  
Elastic Strains

In this paper we study the effect of chemical environment and elastic strains, which can arise in layered heterostructures due to the lattice parameter mismatch, on the vacancy formation energy in random Si-Ge compounds. Ab initio calculations demonstrate a number of simple trends characterizing the vacancy formation energy dependence on vacancy charge, the number of Ge atoms in its neighbourhood and on the magnitude of elastic strains. The obtained parameters of vacancy-germanium interaction indicate, in particular, a tendency for preferential vacancy accumulation in SiGe region of Si/SiGe/Si layered structures, which is confirmed here by Monte- Carlo simulation of high-temperature vacancy annealing and agrees well with recent experimental observations.

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