Micrometer-Scale Imaging of Native Oxide on Silicon Wafers by Using Scanning Auger Electron Spectroscopy

1997 ◽  
pp. 61-70
Author(s):  
Mikio Furuya
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Silicon Wafers ◽  
Native Oxide ◽  
Micrometer Scale

AES STUDY OF THE INTERFACE FORMATION IN PECVD SiO2-InSb STRUCTURES

1989 ◽  
Vol 03 (11) ◽  
pp. 1655-1660 ◽  
Author(s):  
E.P. VALCHEVA ◽  
K.G. GERMANOVA ◽  
S.S. GEORGIEV
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Deposition Temperature ◽  
Auger Electron ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Native Oxide ◽  
Interfacial Region ◽  
Interface Formation

Semiconductor-insulator structures prepared on InSb substrates by plasma-enchanced chemical vapour deposition of SiO 2 are investigated by means of Auger electron spectroscopy. The chemical composition of the oxide layer and the insulator-InSb interface formation are studied as a function of the deposition temperature. The conditions for the presence of native oxide in the interfacial region are estimated and discussed.

Auger electron spectroscopy of silicon wafers

1984 ◽  
Vol 13 (4) ◽  
pp. 427
Author(s):  
K.S. Valvisto ◽  
M.V. Tilli ◽  
E.O. Ristolainen
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Silicon Wafers

Mev Ion Induced Modification of The Native Oxide of Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
R.L. Headrick ◽  
L.E. Seiberling
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Concentration ◽  
Native Oxide ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis

ABSTRACTWe have studied the native oxide of silicon (110) and the changes roduced by MeV ion bombardment using transmission ion channeling of 5.9 MeV 9Be, and Elastic Recoil Detection Analysis (ERDA). Transmission channeling was used to measure interfacial nonregistered Si and adsorbed C and 0. ERDA was used to measure the surface concentration of H. MeV ions were found to cause an increase in the interfacial nonregistered silicon which saturates at approximately one monolayer. Rapid desorption of hydrogen was observed. The effect of 2 keV electrons on the silicon native oxide was also studied by Auger Electron Spectroscopy.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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