Microwave Dielectric Properties with Optimized Mn-Doped Ba0.6Sr0.4TiO3Highly Epitaxial Thin Films

2010 ◽  
Vol 10 (10) ◽  
pp. 4221-4223 ◽  
Author(s):  
Ming Liu ◽  
Chunrui Ma ◽  
Greg Collins ◽  
Jian Liu ◽  
Chonglin Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Epitaxial Thin Films ◽  
Microwave Dielectric ◽  
Mn Doped

Microwave dielectric properties of BaTiO3 and Ba0.5Sr0.5TiO3 thin films on (001) MgO

2009 ◽  
Vol 95 (22) ◽  
pp. 222902 ◽  
Author(s):  
L. M. B. Alldredge ◽  
Wontae Chang ◽  
Steven W. Kirchoefer ◽  
Jeffrey M. Pond
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric

Effect of Thermal Stress on the Microwave Dielectric Properties of (300-X) nm MgTiO3 /(X) nm CaTiO3 Thin Films

2006 ◽  
Vol 45 ◽  
pp. 2332-2336
Author(s):  
Ki Hyun Yoon ◽  
Ji Won Choi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Microwave Dielectric Properties ◽  
Mixing Rule ◽  
Microwave Dielectric ◽  
Dielectric Layers

The microwave dielectric properties of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films have been investigated with correlation between the interface and stress induced by dielectric layers with heattreatment. As the thickness (X) of CaTiO3 film increased, the dielectric constant increased and the temperature coefficient of the dielectric constant changed from the positive to the negative values by the dielectric mixing rule. The dielectric loss of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films increased with an increase of the thickness (X) of CaTiO3 film because of higher thermal stress induced by the higher thermal expansion coefficient of CaTiO3 than that of MgTiO3.

Broadband Microwave Dielectric Properties of BST Thin Films on Quartz Substrates

2007 ◽  
Vol 356 (1) ◽  
pp. 158-165 ◽  
Author(s):  
K. Venkata Saravanan ◽  
K. Sudheendran ◽  
M. Ghanashyam Krishna ◽  
K. C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Bst Thin Films ◽  
Microwave Dielectric ◽  
Quartz Substrates

Research on Sintering Dynamics and Microwave Dielectric Properties of Bi and Mn Doped Lead-Based Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 316-319 ◽  
Author(s):  
Jun Zhao ◽  
Shu Ping Gong ◽  
G. Xiong ◽  
X.H. Yu
Keyword(s):  
Grain Size ◽  
Dielectric Properties ◽  
Grain Growth ◽  
Volume Diffusion ◽  
Microwave Dielectric Properties ◽  
Doping Content ◽  
Mass Ratio ◽  
Microwave Dielectric ◽  
Mn Doped ◽  
Co Doped

The sintering dynamics, microstructures and microwave dielectric properties of Bi2O3 and MnO2 co-doped [(Pb,Ca) La](Fe,Nb)O3 (PCLFN) ceramics were investigated. Bi2O3 and MnO2 dopants effectively enhanced bulk densities and reduced sintering temperatures by about 100~140°C. Sintering procedure had significant effect on grain size and porosities of ceramics. Investigation of microstructures revealed that the grain growth was controlled by either volume diffusion or second-order interface mechanism in present ceramics. The potential microwave dielectric properties of εr=91.1,Qf=4870GHz and τf=18.5ppm/°C could be obtained when the mass ratio of Bi2O3/MnO2 (k) was 1, the doping content w=1wt% and sintered at 1050°C for 4h.

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