Nucleation and Chemical Vapor Deposition Growth of Polycrystalline Diamond on Aluminum Nitride: Role of Surface Termination and Polarity

2013 ◽  
Vol 13 (8) ◽  
pp. 3490-3497 ◽  
Author(s):  
Jiri Cervenka ◽  
Desmond W. M. Lau ◽  
Nikolai Dontschuk ◽  
Olga Shimoni ◽  
Leonardo Silvestri ◽  
...  
2014 ◽  
Vol 136 (8) ◽  
pp. 3040-3047 ◽  
Author(s):  
Xiuyun Zhang ◽  
Lu Wang ◽  
John Xin ◽  
Boris I. Yakobson ◽  
Feng Ding

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 6069-6076 ◽  
Author(s):  
Ivan Vlassiouk ◽  
Murari Regmi ◽  
Pasquale Fulvio ◽  
Sheng Dai ◽  
Panos Datskos ◽  
...  

Nanoscale ◽  
2016 ◽  
Vol 8 (14) ◽  
pp. 7646-7653 ◽  
Author(s):  
Pei Zhao ◽  
Yu Cheng ◽  
Dongchen Zhao ◽  
Kun Yin ◽  
Xuewei Zhang ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 322
Author(s):  
Alexander V. Inyushkin ◽  
Alexander N. Taldenkov ◽  
Victor G. Ralchenko ◽  
Andrey P. Bolshakov ◽  
Alexander V. Khomich

We measured the thermal conductivity κ(T) of polycrystalline diamond with natural (natC) and isotopically enriched (12C content up to 99.96 at.%) compositions over a broad temperature T range, from 5 to 410 K. The high quality polycrystalline diamond wafers were produced by microwave plasma chemical vapor deposition in CH4-H2 mixtures. The thermal conductivity of 12C diamond along the wafer, as precisely determined using a steady-state longitudinal heat flow method, exceeds much that of the natC sample at T>60 K. The enriched sample demonstrates the value of κ(298K)=25.1±0.5 W cm−1 K−1 that is higher than the ever reported conductivity of natural and synthetic single crystalline diamonds with natural isotopic composition. A phenomenological theoretical model based on the full version of Callaway theory of thermal conductivity is developed which provides a good approximation of the experimental data. The role of different resistive scattering processes, including due to minor isotope 13C atoms, defects, and grain boundaries, is estimated from the data analysis. The model predicts about a 37% increase of thermal conductivity for impurity and dislocation free polycrystalline chemical vapor deposition (CVD)-diamond with the 12C-enriched isotopic composition at room temperature.


2011 ◽  
Vol 1 (2) ◽  
pp. 160-166 ◽  
Author(s):  
Rahul Rao ◽  
Neal Pierce ◽  
Xianfeng Zhang ◽  
Robert Wheeler ◽  
Benji Maruyama ◽  
...  

2015 ◽  
Vol 620 ◽  
pp. 87-90 ◽  
Author(s):  
Fan Ye ◽  
Xing-Min Cai ◽  
Xue Zhong ◽  
Huan Wang ◽  
Xiao-Qing Tian ◽  
...  

Nanoscale ◽  
2015 ◽  
Vol 7 (18) ◽  
pp. 8398-8404 ◽  
Author(s):  
Xiao Li ◽  
Xinming Li ◽  
Xiaobei Zang ◽  
Miao Zhu ◽  
Yijia He ◽  
...  

In the two-step chemical vapor deposition growth of MoS2, hydrogen plays crucial roles as an inhibitor of the thermal-induced etching effect and as a promoter of desulfurization and oxidation of the obtained MoSx films.


2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  

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