Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4328-4336 ◽  
Author(s):  
Zhepeng Zhang ◽  
Xujing Ji ◽  
Jianping Shi ◽  
Xiebo Zhou ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Van Der Waals Heterostructures ◽  
Chemical Vapor Deposition Growth

scholarly journals Chemical vapor deposition growth and characterization of graphite-like film

2020 ◽  
Vol 7 (1) ◽  
pp. 015609
Author(s):  
Yanhui Zhang ◽  
Haibo Shu ◽  
Zhiying Chen ◽  
Gang Mu ◽  
Yanping Sui ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Rapid large-scale Characterization of CVD Graphene Layers on Glass using Fluorescence Quenching Microscopy

2011 ◽  
Vol 1344 ◽  
Author(s):  
Jennifer Reiber Kyle ◽  
Ali Guvenc ◽  
Wei Wang ◽  
Jian Lin ◽  
Maziar Ghazinejad ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Fluorescence Quenching ◽  
High Throughput ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

ABSTRACTThe exceptional electrical, optical, and mechanical properties of graphene make it a promising material for many industrial applications such as solar cells, semiconductor devices, and thermal heat sinks. However, the greatest obstacle in the use of graphene in industry is high-throughput scaling of its production and characterization. Chemical-vapor deposition growth of graphene has allowed for industrial-scale graphene production. In this work we introduce complimentary high-throughput metrology technique for characterization of chemical-vapor deposition-grown graphene. This metrology technique provides quick identification of thickness and uniformity of entire large-area chemical-vapor deposition-grown graphene sheets on a glass substrate and allows for easy identification of folds and cracks in the graphene samples. This metrology technique utilizes fluorescence quenching microscopy, which is based on resonant energy transfer between a dye molecule and graphene, to increase allow graphene visualization on the glass substrate and increase the contrast between graphene layers.

Low‐pressure metalorganic chemical vapor deposition growth and characterization of δ‐doped InP

1989 ◽  
Vol 66 (2) ◽  
pp. 867-869 ◽  
Author(s):  
M. A. di Forte‐Poisson ◽  
C. Brylinski ◽  
E. Blondeau ◽  
D. Lavielle ◽  
J. C. Portal
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposition Growth ◽  
Metalorganic Chemical
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