Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4328-4336 ◽  
Author(s):  
Zhepeng Zhang ◽  
Xujing Ji ◽  
Jianping Shi ◽  
Xiebo Zhou ◽  
Shuai Zhang ◽  
...  

2020 ◽  
Vol 7 (1) ◽  
pp. 015609
Author(s):  
Yanhui Zhang ◽  
Haibo Shu ◽  
Zhiying Chen ◽  
Gang Mu ◽  
Yanping Sui ◽  
...  

2011 ◽  
Vol 1344 ◽  
Author(s):  
Jennifer Reiber Kyle ◽  
Ali Guvenc ◽  
Wei Wang ◽  
Jian Lin ◽  
Maziar Ghazinejad ◽  
...  

ABSTRACTThe exceptional electrical, optical, and mechanical properties of graphene make it a promising material for many industrial applications such as solar cells, semiconductor devices, and thermal heat sinks. However, the greatest obstacle in the use of graphene in industry is high-throughput scaling of its production and characterization. Chemical-vapor deposition growth of graphene has allowed for industrial-scale graphene production. In this work we introduce complimentary high-throughput metrology technique for characterization of chemical-vapor deposition-grown graphene. This metrology technique provides quick identification of thickness and uniformity of entire large-area chemical-vapor deposition-grown graphene sheets on a glass substrate and allows for easy identification of folds and cracks in the graphene samples. This metrology technique utilizes fluorescence quenching microscopy, which is based on resonant energy transfer between a dye molecule and graphene, to increase allow graphene visualization on the glass substrate and increase the contrast between graphene layers.


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