Laser magnetic resonance, resonance fluorescence, resonance absorption studies of the reaction kinetics of atomic oxygen + hydroxyl .fwdarw. atomic hydrogen + molecular oxygen, atomic oxygen + perhydroxyl .fwdarw. hydroxyl + molecular oxygen, atomic nitrogen + hydroxyl .fwdarw. atomic hydrogen + nitric oxide, atomic nitrogen + perhydroxyl .fwdarw. products at 300 K between 1 and 5 torr

1983 ◽  
Vol 87 (22) ◽  
pp. 4503-4514 ◽  
Author(s):  
W. H. Brune ◽  
James J. Schwab ◽  
J. G. Anderson
Keyword(s):  
Nitric Oxide ◽  
Molecular Oxygen ◽  
Atomic Hydrogen ◽  
Atomic Oxygen ◽  
Resonance Absorption ◽  
Resonance Fluorescence ◽  
Atomic Nitrogen ◽  
Absorption Studies ◽  
Laser Magnetic Resonance ◽  
Kinetics Of

Kinetics of the reaction between atomic nitrogen and molecular oxygen in the ground ( 3 ∑ - g ) and first excited ( 1 ∆ g ) states

1970 ◽  
Vol 316 (1527) ◽  
pp. 539-550 ◽  
Keyword(s):  
Nitric Oxide ◽  
Molecular Oxygen ◽  
Rate Constants ◽  
Room Temperature ◽  
Atomic Nitrogen ◽  
D Region ◽  
Exponential Factors ◽  
The Difference ◽  
Kinetics Of ◽  
Arrhenius Expression

Rate constants for the reaction N + O 2 ( 1 ∆ g ) → k 1 NO + O (1) have been measured at four temperatures, and fitted to an Arrhenius expression, k 1 = A exp ( ─ E a / RT ). The results indicate that A ≤ 2 x 10 -14 molecule -1 cm 3 s -1 and < 1.2 kcal (5.0 kJ ) mol -1 : at room temperature (300 K ), k 1 = 2.7 ± 1.0 x 10 -15 molecule -1 cm 3 s -1 . Reaction (1) cannot, therefore, proceed fast enough at 200 K for it to be an important source of nitric oxide in the atmospheric D-region. The rate constant for the reaction N + O 2 ( 3 ∑ ─ g ) → k 2 NO + O (2) has been measured at 302 K to be 1.08 ± 0.10 x 10 -16 molecule -1 cm 3 s -1 . This value, taken together with the data of earlier workers, suggests that k 2 = 1.5 x 10 -11 exp (—7.1/ RT ) molecule -1 cm 2 s -1 . A possible explanation for the difference in pre-exponential factors for reactions (1) and (2) is presented.

scholarly journals Numerical studies of nitric oxide formation in nanosecond-pulsed discharge-stabilized flames of premixed methane/air

2015 ◽  
Vol 373 (2048) ◽  
pp. 20140331
Author(s):  
Moon Soo Bak ◽  
Mark A. Cappelli
Keyword(s):  
Nitric Oxide ◽  
Atomic Oxygen ◽  
Oh Radicals ◽  
Post Discharge ◽  
Nitric Oxide Formation ◽  
No Formation ◽  
Numerical Studies ◽  
Discharge Temperature ◽  
Discharge Simulation ◽  
Kinetics Of

A simulation is developed to investigate the kinetics of nitric oxide (NO) formation in premixed methane/air combustion stabilized by nanosecond-pulsed discharges. The simulation consists of two connected parts. The first part calculates the kinetics within the discharge while considering both plasma/combustion reactions and species diffusion, advection and thermal conduction to the surrounding flow. The second part calculates the kinetics of the overall flow after mixing the discharge flow with the surrounding flow to account for the effect that the discharge has on the overall kinetics. The simulation reveals that the discharge produces a significant amount of atomic oxygen (O) as a result of the high discharge temperature and dissociative quenching of excited state nitrogen by molecular oxygen. This atomic oxygen subsequently produces hydroxyl (OH) radicals. The fractions of these O and OH then undergo Zel’dovich reactions and are found to contribute to as much as 73% of the total NO that is produced. The post-discharge simulation shows that the NO survives within the flow once produced.

Oxidation Kinetics of Yba2Cu3OT7-x Thin Films in the Presence of Atomic Oxygen and Molecular Oxygen by In-Situ Resistivity Measurement

1991 ◽  
Vol 230 ◽  
Author(s):  
K. Yamamoto ◽  
B. M. Lairson ◽  
J. C. Bravman ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Molecular Oxygen ◽  
Atomic Oxygen ◽  
Resistivity Measurement ◽  
Oxygen Stoichiometry ◽  
Ambient Conditions ◽  
Kinetics Of Oxidation ◽  
Thermally Activated ◽  
Kinetics Of

AbstractThe kinetics of oxidation in Yba2Cu3O7-x thin films in the presence of molecular and atomic oxygen ambients have been studied. The resistivity of c-axis, a-axis, and mixed a+c axis oriented films, deposited in-situ by off-axis magnetron sputtering, was measured as a function of time subsequent to a change in the ambient conditions. The oxidation process is shown to be thermally activated and can be characterized by a diffusion model with an activation energy which varies from approximately 1.2eV in the presence of molecular oxygen to 0.6eV for a flux of 2×1015 oxygen atoms/cm2sec. In both cases, diffusivity is found to be insensitive to oxygen stoichiometry, but the rate of oxidation is found to be sensitive to the microstructure and orientation of the films.

Sign in / Sign up

Export Citation Format

Share Document