A Novel Low-Temperature Adsorption State of Nitric Oxide on a Rh(111)−p(2 × 2)-CCH3Surface Studied by Reflection−Absorption Infrared Spectroscopy and Auger Electron Spectroscopy

2003 ◽  
Vol 107 (29) ◽  
pp. 7058-7063 ◽  
Author(s):  
Vittorio Fiorin ◽  
Martin R. S. McCoustra ◽  
Michael A. Chesters
Keyword(s):  
Nitric Oxide ◽  
Infrared Spectroscopy ◽  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Adsorption State ◽  
Reflection Absorption Infrared Spectroscopy

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

Low Temperature Oxidation of Silicon Studied by Photosensitive ESR and Auger Electron Spectroscopy

1976 ◽  
Vol 123 (1) ◽  
pp. 26-29 ◽  
Author(s):  
Jerzy Rużyłło ◽  
Ikuo Shiota ◽  
Nobuo Miyamoto ◽  
Jun‐ichi Nishizawa
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

scholarly journals Auger Electron Spectroscopy of Carbon Diffusion Profiles in Low Temperature Carburized Stainless Steels

2013 ◽  
Vol 19 (S2) ◽  
pp. 1106-1107 ◽  
Author(s):  
W. Jennings ◽  
A. Avishai ◽  
B. Cowen ◽  
H. Kahn ◽  
F. Ernst ◽  
...  
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Stainless Steels ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Carbon Diffusion ◽  
Diffusion Profiles

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

scholarly journals The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

1988 ◽  
Vol 195 (3) ◽  
pp. L167-L172 ◽  
Author(s):  
A.G.B.M. Sasse ◽  
D.G. Lakerveld ◽  
A. Van Silfhout
Keyword(s):  
Nitric Oxide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron

scholarly journals Поверхностное соединение при адсорбции Be на W(100): определение абсолютной концентрации и свойства

2022 ◽  
Vol 48 (3) ◽  
pp. 21
Author(s):  
Е.В. Рутьков ◽  
Е.Ю. Афанасьева ◽  
Н.Р. Галль
Keyword(s):  
Activation Energy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
High Vacuum ◽  
Surface Concentration ◽  
Ultra High Vacuum ◽  
Absolute Concentration ◽  
Adsorption State ◽  
The Absolute

Be adsorption and T = 900 - 1100 K results in formation of a stable adsorption state; it drops the activation energy of atomic Be dissolution in the substrate bulk, and all newly deposited Be dissolves in the substrate. The absolute concentration of atomic Be has been measured by Auger electron spectroscopy using specially designed ultra high vacuum getter Be source. The concentration is (1 ± 0.1)•1015 сm-2 , and corresponds to WBe stoichiometry relative to W surface concentration. The layer is destroyed at T > 1100 K, the atomic Be dissolves in the bulk with the activation energy ~ 3,5 eV.

scholarly journals HIGH RESOLUTION AUGER ELECTRON SPECTROSCOPY OF NITRIC OXIDE ADSORBED ON A TUNGSTEN SURFACE

1975 ◽  
Vol 4 (12) ◽  
pp. 1303-1304 ◽  
Author(s):  
Kimio Kunimori ◽  
Tomoji Kawai ◽  
Tamotsu Kondow ◽  
Takaharu Onishi ◽  
Kenzi Tamaru
Keyword(s):  
Nitric Oxide ◽  
High Resolution ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Tungsten Surface
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