White-Light-Emitting Silicon Nanocrystal Generated by Pulsed Laser Ablation in Supercritical Fluid: Investigation of Spectral Components As a Function of Excitation Wavelengths and Aging Time

2012 ◽  
Vol 116 (6) ◽  
pp. 3928-3934 ◽  
Author(s):  
Shaoyu Wei ◽  
Tomoharu Yamamura ◽  
Daisuke Kajiya ◽  
Ken-ichi Saitow
2017 ◽  
Vol 43 (1) ◽  
pp. 355-362 ◽  
Author(s):  
A. Aguilar-Castillo ◽  
J.R. Aguilar-Hernández ◽  
M. García-Hipólito ◽  
S. López-Romero ◽  
R.K. Swarnkar ◽  
...  

2013 ◽  
Vol 114 (14) ◽  
pp. 143303 ◽  
Author(s):  
Keiichiro Urabe ◽  
Toru Kato ◽  
Sven Stauss ◽  
Shohei Himeno ◽  
Satoshi Kato ◽  
...  

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Takaaki Orii ◽  
...  

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Seinosuke Onari

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Takaaki Orii ◽  
...  

2000 ◽  
Vol 638 ◽  
Author(s):  
Yuka Yamada ◽  
Toshiharu Makino ◽  
Nobuyasu Suzuki ◽  
Takehito Yoshida

AbstractWe have developed silicon (Si) nanocrystallite light-emitting devices synthesized by a novel integrated process in which a size-controlling unit of differential mobility analyzer (DMA) is combined to a nanocrystallite formation unit of pulsed laser ablation (PLA). The size-controlled Si nanocrystallites as active layers have been deposited on Si substrates, and have been covered with stoichiometric indium oxide (In2O3) thin films synthesized also by the PLA process. The electroluminescence (EL) spectra had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap (1.10 eV), at room temperature.


2012 ◽  
Vol 101 (22) ◽  
pp. 224103 ◽  
Author(s):  
Toru Kato ◽  
Sven Stauss ◽  
Satoshi Kato ◽  
Keiichiro Urabe ◽  
Motoyoshi Baba ◽  
...  

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