<title>Semiconductor nanocrystallite formation using inert gas ambient pulsed laser ablation and its application to light-emitting devices</title>

AbstractWe have developed silicon (Si) nanocrystallite light-emitting devices synthesized by a novel integrated process in which a size-controlling unit of differential mobility analyzer (DMA) is combined to a nanocrystallite formation unit of pulsed laser ablation (PLA). The size-controlled Si nanocrystallites as active layers have been deposited on Si substrates, and have been covered with stoichiometric indium oxide (In2O3) thin films synthesized also by the PLA process. The electroluminescence (EL) spectra had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap (1.10 eV), at room temperature.

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Electroluminescence of silicon nanocrystallites prepared by pulsed laser ablation in reduced pressure inert gas

Journal of Applied Physics ◽

10.1063/1.367373 ◽

1998 ◽

Vol 83 (10) ◽

pp. 5427-5432 ◽

Cited By ~ 67

Author(s):

Takehito Yoshida ◽

Yuka Yamada ◽

Takaaki Orii

Keyword(s):

Laser Ablation ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Inert Gas ◽

Reduced Pressure ◽

Silicon Nanocrystallites

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Optical properties of silicon nanocrystallites prepared by pulsed laser ablation in inert gas ambient

10.1117/12.253105 ◽

1996 ◽

Cited By ~ 3

Author(s):

Takehito Yoshida ◽

Yuka Yamada ◽

Shigeru Takeyama ◽

Takaaki Orii ◽

Ikurou Umezu ◽

...

Keyword(s):

Optical Properties ◽

Laser Ablation ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Inert Gas ◽

Silicon Nanocrystallites

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White-Light-Emitting Silicon Nanocrystal Generated by Pulsed Laser Ablation in Supercritical Fluid: Investigation of Spectral Components As a Function of Excitation Wavelengths and Aging Time

The Journal of Physical Chemistry C ◽

10.1021/jp210080k ◽

2012 ◽

Vol 116 (6) ◽

pp. 3928-3934 ◽

Cited By ~ 32

Author(s):

Shaoyu Wei ◽

Tomoharu Yamamura ◽

Daisuke Kajiya ◽

Ken-ichi Saitow

Keyword(s):

Laser Ablation ◽

Aging Time ◽

Supercritical Fluid ◽

White Light ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Silicon Nanocrystal ◽

Light Emitting ◽

Spectral Components

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Zinc oxide nanocolloids prepared by picosecond pulsed laser ablation in water at different temperatures

EPJ Web of Conferences ◽

10.1051/epjconf/201816704008 ◽

2018 ◽

Vol 167 ◽

pp. 04008 ◽

Cited By ~ 4

Author(s):

Luisa D’Urso ◽

Salvatore Spadaro ◽

Martina Bonsignore ◽

Saveria Santangelo ◽

Giuseppe Compagnini ◽

...

Keyword(s):

Zinc Oxide ◽

Laser Ablation ◽

Uv Light ◽

Zno Nanorods ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Blue Dye ◽

Light Emitting Devices ◽

Water Media ◽

Different Temperatures

Zinc oxide with wide direct band gap and high exciton binding energy is one of the most promising materials for ultraviolet (UV) light-emitting devices. It further exhibits good performance in the degradation of non-biodegradable pollutants under UV irradiation. In this work, zinc oxide (ZnO) and zinc oxide/gold (ZnO/Au) nanocolloids are prepared by picosecond pulsed laser ablation (ps-PLA), using a Zn and Au metallic targets in water media at room temperature (RT) and 80°C. ZnO and Au nanoparticles (NPs) with size in the 10–50 nm range are obtained at RT, while ZnO nanorods (NRs) are formed when water is maintained at 80°C during the ps-PLA process. Au NPs, added to ZnO colloids after the ablation process, decorate ZnO NRs. The crystalline phase of all ZnO nanocolloids is wurtzite. Methylene blue dye is used to investigate the photo-catalytic activity of all the synthesised nanocolloids, under UV light irradiation.

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CONTROLLED GROWTH OF ISOLATED VANADIUM NANOSTRUCTURES VIA PULSED LASER ABLATION

International Journal of Nanoscience ◽

10.1142/s0219581x09006432 ◽

2009 ◽

Vol 08 (06) ◽

pp. 589-593 ◽

Cited By ~ 1

Author(s):

A. B. PHILLIPS ◽

B. S. SHIVARAM

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Laser Ablation ◽

Composite Structures ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Inert Gas ◽

Parameter Control ◽

Scanning Electron ◽

Shape And Size

Utilizing pulsed laser ablation we show that it is possible to grow isolated nanostructures of vanadium whose shape and size are controllable simply by changing the background pressure of an inert gas in the growth chamber. The nanostructures obtained are characterized through scanning electron microscopy measurements. The range of nanostructures obtained by a simple one parameter control suggest that further synthesis of more sophisticated nanoscale composite structures should be possible if multistep growth and processing are employed.

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