Silicon Nanocrystallite Light Emitting Devices Fabricated by Full Pulsed-Laser-Ablation Process
Keyword(s):
AbstractWe have developed silicon (Si) nanocrystallite light-emitting devices synthesized by a novel integrated process in which a size-controlling unit of differential mobility analyzer (DMA) is combined to a nanocrystallite formation unit of pulsed laser ablation (PLA). The size-controlled Si nanocrystallites as active layers have been deposited on Si substrates, and have been covered with stoichiometric indium oxide (In2O3) thin films synthesized also by the PLA process. The electroluminescence (EL) spectra had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap (1.10 eV), at room temperature.
1991 ◽
Vol 49
◽
pp. 1068-1069
2011 ◽
Vol 25
(7)
◽
pp. 1811-1816
◽
Keyword(s):
2019 ◽
Vol 95
◽
pp. 102407
◽
1995 ◽
Vol 34
(Part 1, No. 9B)
◽
pp. 5154-5157
◽
2012 ◽
Vol 116
(6)
◽
pp. 3928-3934
◽
Keyword(s):
2014 ◽
Vol 28
(5)
◽
pp. 1797-1802
◽