Microwave Effects on Chemical Functionalization of Hydrogen-Terminated Porous Silicon Nanostructures

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

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Prolonged controlled delivery of nerve growth factor using porous silicon nanostructures

Journal of Controlled Release ◽

10.1016/j.jconrel.2016.12.008 ◽

2017 ◽

Vol 257 ◽

pp. 51-59 ◽

Cited By ~ 21

Author(s):

Neta Zilony ◽

Michal Rosenberg ◽

Liran Holtzman ◽

Hadas Schori ◽

Orit Shefi ◽

...

Keyword(s):

Nerve Growth Factor ◽

Growth Factor ◽

Porous Silicon ◽

Controlled Delivery ◽

Silicon Nanostructures ◽

Nerve Growth

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Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.576.511 ◽

2012 ◽

Vol 576 ◽

pp. 511-515

Author(s):

N.A. Asli ◽

Maslihan Ain Zubaidah ◽

S.F.M. Yusop ◽

Khairunnadim Ahmad Sekak ◽

Mohammad Rusop ◽

...

Keyword(s):

Porous Silicon ◽

Crystalline Silicon ◽

Surface Characteristic ◽

Electrochemical Anodization ◽

Silicon Nanostructures ◽

Etching Time ◽

Force Microscopy ◽

Etching Parameters ◽

P Type ◽

Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

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