Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Photoluminescence Properties of Porous Silicon Nanostructures (PSiNs) with Optimum Electrolyte Volume Ratio of Photo-Electrochemical Anodization

2012 ◽  
Vol 620 ◽  
pp. 40-44 ◽  
Author(s):  
Maslihan Ain Zubaidah ◽  
N.A. Asli ◽  
S.F.M. Yusop ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be a device for future flat screen display and can be high in demand. Main purpose of this experiment is to determine the photoluminescence properties of porous silicon nanostructures (PSiNs). PSiNs samples were prepared using photo-electrochemical anodization. P-type silicon substrate was used for this experiment. For the formation of PSiNs, a fixed current density (J=20 mA/cm2) and 30 minutes etching time was applied for the variety of electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH, were used for samples 3:1, 2:1, 1:1, 1:2 and 3:1. The effective photoluminescence properties was observed for sample C.

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

Effect of etching time on structure of p-type porous silicon

2018 ◽  
Vol 461 ◽  
pp. 44-47 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Pavol Vojtek ◽  
Jan Gregus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Etching Time ◽  
P Type

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Shereen M. Faraj ◽  
Shaimaa M. Abd Al-Baqi ◽  
Nasreen R. Jber ◽  
Johnny Fisher
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Diode Lasers ◽  
Focus Of Attention ◽  
Blue Laser ◽  
Uniform Structure ◽  
Porous Layers ◽  
Current Densities ◽  
P Type ◽  
532 Nm

Porous silicon (PS) has become the focus of attention in upgrading silicon for optoelectronics. In this work, various structures were produced depending on the formation parameters by photo-electrochemical etching (PECE) process of n- and p-type silicon wafer at different time durations (5–90 mins) and different current densities (5, 15, and 20 mA/cm2) for each set of time durations. Diode lasers of 405 nm, 473 nm, and 532 nm wavelengths, each 50 mW power, were used to illuminate the surface of the samples during the etching process. The results showed that controlled porous layers were achieved by using blue laser, giving uniform structure which can make it possible to dispense with expensive methods of patterning the silicon.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

ESR Study of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
W. Y. Cheung ◽  
S. P. Wong ◽  
I. H. Wilson ◽  
C. F. Kan ◽  
S. K. Hark
Keyword(s):  
Porous Silicon ◽  
Spin Density ◽  
Light Emission ◽  
Blue Shift ◽  
Esr Spectra ◽  
Peak Position ◽  
Silicon Substrates ◽  
Post Annealing ◽  
G Value ◽  
P Type

ABSTRACTA detailed ESR study has been performed on porous silicon on both <100> and <111> p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the light emission properties. It is found that the ESR spectra are dependent upon the orientation of the samples. The ESR defect centers are identified to be the Pb centers or Pbo centers of the Si-SiO2 system from the g-value anisotropy maps. The variation of the spin density Ns with annealing conditions has also been studied for samples annealed either in nitrogen or oxygen ambient at 200°C for various time intervals. It is concluded that the increase or decrease of Ns are due to the generation or elimination of the Pb or Pbo centers in conjunction with the oxidation process during annealing. From PL study of these samples, it is found that there is no simple correlation between the spin density and the PL intensity. However, a blue shift in the PL peak position was observed both in samples after a post-annealing etch in HF solution, and in samples annealed in oxygen without a post-annealing etch. This blue shift supports the quantum confinement model of light emission from porous silicon.

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