Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

Nano Letters ◽  
2003 ◽  
Vol 3 (8) ◽  
pp. 1063-1066 ◽  
Author(s):  
Tevye Kuykendall ◽  
Peter Pauzauskie ◽  
Sangkwon Lee ◽  
Yanfeng Zhang ◽  
Joshua Goldberger ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Metalorganic Chemical

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

2020 ◽  
Vol 257 (4) ◽  
pp. 1900581
Author(s):  
Rosalia Delgado Carrascon ◽  
Dat Quoc Tran ◽  
Pitsiri Sukkaew ◽  
Alyssa Mock ◽  
Rafal Ciechonski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Metalorganic Chemical

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

The effect of growth temperature on the coaxial InxGa1−xN/GaN nanowires grown by metalorganic chemical vapor deposition

2012 ◽  
Vol 520 (23) ◽  
pp. 6975-6979
Author(s):  
Ji-Hyeon Park ◽  
R. Navamathavan ◽  
Yong-Ho Ra ◽  
Bo-Ra Yeom ◽  
Jae-Kwan Sim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Metalorganic Chemical

scholarly journals Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

2005 ◽  
Vol 86 (3) ◽  
pp. 033104 ◽  
Author(s):  
G. Kipshidze ◽  
B. Yavich ◽  
A. Chandolu ◽  
J. Yun ◽  
V. Kuryatkov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Controlled Growth ◽  
Gan Nanowires ◽  
Metalorganic Chemical

Effect of H2Carrier Gas on the Growth of GaN Nanowires on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

2010 ◽  
Vol 49 (4) ◽  
pp. 045004 ◽  
Author(s):  
Yong-Ho Ra ◽  
Rangaswamy Navamathavan ◽  
Jun-Ho Cha ◽  
Ki-Young Song ◽  
Hong-Chul Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Metalorganic Chemical
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